Jpn. J. Appl. Phys. 25 (1986) pp. 1132-1133  |Next Article|  |Table of Contents|
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Short Note

Fabrication of NbN/Pb(In) Josephson Junctions with High Resistive Normal Layer Produced by Ar⁺ Ion Bombardment

Yukinori Saito and Shinji Suganomata

(Received April 16, 1986; accepted for publication May 24, 1986)

NbN/normal layer/Pb(In) Josephson junctions were fabricated by Ar⁺-ion bombardment. A thin normal layer of the order of ∼7 nm with a very high resistivity was produced in the near surface of an NbN film. This type S-N-S junction showed well-defined constant-voltage steps up to about 500 µV when microwave power was applied.

URL: http://jjap.jsap.jp/link?JJAP/25/1132/
DOI: 10.1143/JJAP.25.1132

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