Jpn. J. Appl. Phys. 25 (1986) pp. L611-L613 |Next Article| |Table of Contents|
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Letter
Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
Minoru Mihara,
Masaya Mannoh,
Keisuke Shinozaki,
Shigeya Naritsuka and
Makoto Ishii
Optoelectronics Joint Research Laboratory
(Received June 9, 1986; accepted for publication June 21, 1986)
The 1.44 eV photoluminescence peak of the 78 meV acceptor, previously known only in bulk GaAs crystals, has been observed in lightly Si-doped GaAs layers grown by molecular beam epitaxy. This observation provides strong evidence that the 78 meV acceptor is related to the Ga antisite defect (GaAs).
URL:
http://jjap.jsap.jp/link?JJAP/25/L611/
DOI: 10.1143/JJAP.25.L611
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