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Jpn. J. Appl. Phys. 25 (1986) pp. L859-L861  |Next Article|  |Table of Contents|
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Letter

Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals

Masashi Suezawa, Koji Sumino, Hirofumi Harada¹ and Takao Abe¹

The Research Institute for Iron, Steel and Other Metals, Tohoku University
¹Shin-Etsu Handotai Company

(Received August 25, 1986; accepted for publication September 20, 1986)

Optical absorption of silicon crystals involving nitrogen and oxygen is investigated at low temperature. New absorption lines are found and attributed to seven defect levels that act as shallow donors. The characteristics of the absorption lines are well described by the effective mass approximation. Five among these seven levels are related to complexes of nitrogen and oxygen atoms.

URL: http://jjap.jsap.jp/link?JJAP/25/L859/
DOI: 10.1143/JJAP.25.L859

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References | Citing Articles (61)

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