Jpn. J. Appl. Phys. 27 (1988) pp. 1498-1503  |Next Article|  |Table of Contents|
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Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method

Noriaki Honma, Chusuke Munakata and Hirofumi Shimizu¹

(Received November 13, 1987; revised manuscript revised March 22, 1988; accepted for publication June 25, 1988)

Minority carrier lifetimes measured by both ac photovoltaic and photoconductive decay methods are compared. The calculated results indicate that the maximum measurable lifetime for the ac photovoltaic method is about 7 times larger than that for the photoconductive decay method when surface recombination velocity is assumed to be infinite. The lifetimes for both p-type and n-type silicon rectangular samples measured by the ac photovoltaic method are in good agreement with the lifetimes ranging from 90 µs to 1 ms measured by the photoconductive decay method standardized by the Japanese Industrial Standard Committee. However, lifetimes measured by a noncontact photoconductive decay method using microwaves are far shorter than those measured by the above two methods.

URL: http://jjap.jsap.jp/link?JJAP/27/1498/
DOI: 10.1143/JJAP.27.1498

References | Citing Articles (8)

1. C. Munakata, N. Honma and H. Itoh: Jpn. J. Appl. Phys. 22 (1983) L103[JSAP].
2. N. Honma, C. Munakata, H. Itoh and T. Warabisako: Jpn. J. Appl. Phys. 25 (1986) 743[JSAP].
3. N. Honma, C. Munakata and H. Itoh: Jpn. J. Appl. Phys. 23 (1984) L354[JSAP].
4. N. Honma and C. Munakata: Jpn. J. Appl. Phys. 26 (1987) 2033[JSAP].
5. D. T. Stevenson and R. J. Keyes: J. Appl. Phys. 26 (1955) 190[AIP Scitation].
6. J. S. Blakemore: Phys. Rev. 110 (1958) 1301[APS].
7. A. P. Ramsa, H. Jacobs and F. A. Brand: J. Appl. Phys. 30 (1959) 1054[AIP Scitation].
8. N. J. Harrick: J. Appl. Phys. 27 (1956) 1439[AIP Scitation].
9. A. Usami, H. Nishioka and Y. Inoue: IEEE 16th Photovoltaic Specialists Conf. Record, San Diego, 1982 (IEEE, New York, 1982) p. 752.
10. T. Warabisako, T. Saitoh, T. Motooka and T. Tokuyama: Proc. 14th Conf. Solid State Devices, Tokyo. 1982, Jpn. J. Appl. Phys. 22 (1983) Suppl. 22-1, p. 557[JSAP].
11. IRE Standard Committee: Proc. IRE49 (1961) 1292.
12. Japanese Industrial Standards Committee: Measurement of Minority Carrier Life Time in Silicon by Photoconductive Decay Method (Japanese Standards Association, Tokyo, 1978) JISH0604.
13. T. L. Chu and E. D. Stokes: J. Appl. Phys. 49 (1978) 2996[AIP Scitation].
14. D. Huber, A. Bachmeier, R. Wahlich and H. Herzer: Proc. 5th Int. Symp. on Silicon Materials Science & Technology, Semiconductor Silicon 1986 (The Electrochem. Soc. Inc., Pennington, 1982) p. 1022.
15. A. S. Grove: Physics of Semiconductor Devices (Wiley-Inter-science, New York, 1966) Chap. 12.
16. C. Munakata, S. Nishimatsu, N. Honma and K. Yagi: Jpn. J. Appl. Phys. 23 (1984) 1451[JSAP].
17. C. Munakata and S. Nishimatsu: Jpn. J. Appl. Phys. 25 (1986) 807[JSAP].
18. A. S. Grove: Physics of Semiconductor Devices (Wiley-Inter-science, New York, 1966) Chap. 10.
19. D. J. Fitzgerald and A. S. Grove: Surf. Sci. 9 (1968) 347[CrossRef].
20. C. Munakata, K. Yagi, T. Warabisako, M. Nanba and S. Matsubara: Jpn. J. Appl. Phys. 21 (1982) 624[JSAP].
21. W. R. Runyan: Semiconductor Measurements and Instrumentation (McGraw-Hill, New York, 1975) Chap. 4.
22. H. Shimizu, K. Kinameri, N. Honma and C. Munakata: Jpn. J. Appl. Phys. 26 (1987) 226[JSAP].
23. C. Munakata, N. Honma and H. Hayakawa: Jpn. J. Appl. Phys. 23 (1984) 778[JSAP].
24. C. Munakata and N. Honma: Jpn. J. Appl. Phys. 26 (1987) 564[JSAP].