Jpn. J. Appl. Phys. 27 (1988) pp. 1585-1592  |Next Article|  |Table of Contents|
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MBE Growth of GaAs_1-xSb_x and In_yGa_1-yAs and Application of BCF Theory to Study the Alloy Composition

Kazuhiro Mochizuki and Tatau Nishinaga

(Received March 29, 1988; accepted for publication July 23, 1988)

The solid composition of GaAs_1-xSb_x and In_yGa_1-yAs grown on a stepped surface by molecular beam epitaxy is discussed. The experimental results show that the concentration of Sb or In in the epitaxial layer decreases rapidly with the growth temperature and that Sb becomes lower and In higher in concentration with increasing off-angle from the (100) surface. In order to explain these phenomena, the BCF theory is successfully applied.

URL: http://jjap.jsap.jp/link?JJAP/27/1585/
DOI: 10.1143/JJAP.27.1585

References | Citing Articles (3)

1. A. Rocket, T. J. Drummond, J. E. Green and H. Morkoç: J. Appl. Phys. 53 (1982) 7085[AIP Scitation].
2. J. Massies, F. Turco, A. Salates and J. P. Contour: J. Cryst. Growth 80 (1987) 307.
3. R. Heckingbottom: J. Vac. Sci. & Technol. B3 (1985) 572.
4. H. Seki and A. Koukitu: J. Cryst. Growth 78 (1986) 342[CrossRef].
5. G. B. Stringfellow: J. Cryst. Growth 62 (1983) 225.
6. S. M. Bedair, M. L. Timmons, P. K. Chiang, L. Simpson and J. R. Hauser: J. Electron. Mater. 12 (1983) 959.
7. H. Seki and A. Koukitu: J. Cryst. Growth 74 (1986) 172[CrossRef].
8. J. H. Neave, P. J. Dobson, B. A. Joyce and J. Zhang: Appl. Phys. Lett. 47 (1985) 100[AIP Scitation].
9. T. Nishinaga and K. I. Cho: Jpn. J. Appl. Phys. 27 (1988) L12[JSAP].
10. W. K. Burton, N. Cabrera and F. C. Frank: Philos. Trans. Roy. Soc. (London) 243A (1951) 299.
11. E. Kasper: Appl. Phys. A 28 (1982) 129.
12. J. R. Pessetto and G. B. Stringfellow: J. Cryst. Growth 62 (1983) 1.
13. O. Waho, S. Ogawa and S. Maruyama: Jpn. J. Appl. Phys. 16 (1977) 1875[JSAP].
14. C. A. Chang, R. Ludeke, L. L. Chang and L. Esaki: Appl. Phys. Lett. 31 (1977) 759[AIP Scitation].
15. H. Cheng, T. Koyanagi and A. G. Milnes: J. Vac. Sci. & Technol. B4 (1986) 528.
16. T. H. Chiu, W. T. Tsang, S. N. G. Chu, J. Shah and J. A. Ditzenberger: Appl. Phys. Lett. 46 (1985) 408[AIP Scitation].
17. C. B. Cooper, O. O. Saxena and M. J. Ludowise: J. Electron. Mater. 11 (1982) 1001.
18. G. B. Stringfellow and M. J. Cherng: J. Cryst. Growth 64 (1983) 413.
19. M. J. Cherng, G. B. Stringfellow and R. M. Cohen: Appl. Phys. Lett. 44 (1984) 677[AIP Scitation].
20. M. Y. Yen, B. F. Levine, C. G. Bethea, K. K. Choi and A. Y. Cho: Appl. Phys. Lett. 50 (1987) 927[AIP Scitation].
21. S. Chika, H. Kato, M. Nakayama and N. Sano: Jpn. J. Appl. Phys. 25 (1986) 1441[JSAP].
22. D. R. Stull and G. C. Sinke: Thermodynamic Properties of the Elements (American Chemical Society, Washington D.C., 1956).
23. J. Klem, R. Fischer, T. J. Drummond, H. Morkoç and A. Y. Cho: Electron. Lett. 19 (1983) 453[AIP Scitation].
24. M. Naganuma, S. Miyazawa and H. Iwasaki: J. Vac. Sci. & Technol. 17 (1980) 606[AIP Scitation].
25. C. A. Chang, R. Ludeke, L. L. Chang and L. Esaki: Appl. Phys. Lett. 31 (1977) 759[AIP Scitation].
26. H. Cheng, T. Koyanagi and A. G. Milnes: J. Vac. Sci. Technol. B4 (1986) 528.
27. T. Nishinaga and K. Mochizuki: 6th Rec. Alloy Semicond. Physics and Electronics Symposium (c/o Prof. A. Sasaki, Kyoto University, 1987) p. 39.
28. C. T. Foxon and B. A. Joyce: Surf. Sci. 50 (1975) 434.
29. R. F. Brebrick: Met. Trans. 2 (1971) 3377.
30. B. D. Lichter and P. Sommelet: Trans. TMS-AIME 245 (1969) 99.
31. B. D. Lichter and P. Sommelet: Trans. TMS-AIME 245 (1969) 1021.
32. M. B. Panish and M. Ilegems: Progress in Solid State Chemistry, Eds. H. Reiss and J. O. McCaldin (Pergamon, New York, 1972) vol. 7, p. 79.
33. T. Nishinaga, T. Shitara and K. I. Cho: 7th Rec. Alloy Semicond. Physics and Electronics Symposium (c/o Prof. A. Sasaki, Kyoto University, 1988) p. 57.