Jpn. J. Appl. Phys. 27 (1988) pp. 1593-1598  |Next Article|  |Table of Contents|
|Full Text PDF (3316K)| |Buy This Article|

Misfit Dislocation Structures at MBE-Grown Si_1-xGe_x/Si Interfaces

Yukio Fukuda, Yoshitaka Kohama, Masahiro Seki and Yoshiro Ohmachi

(Received May 12, 1988; accepted for publication June 25, 1988)

Misfit dislocation structures introduced at Si_1-xGe_x/Si (001) Interfaces were studied using transmission electron microscopy to understand the relaxation mechanism of lattice misfit in this material system. Misfit dislocations observed at the interfaces for x≤0.5 are inclined 60° dislocations introduced by glide processes. The density of the misfit dislocations increases with mole fraction or thickness of the Si_1-xGe_x as a result of the Hagen-Strunk multiplication mechanism. The threading dislocations contained in the epilayers originate in transition dislocation segments appearing during the multiplication processes. In contrast with these results, the misfit dislocations observed at the Ge/Si interface are the 90° -type introduced by climb processes. The misfit dislocations were regularly distributed with an average spacing of ∼100Å, which is sufficient to relax the 4.2% misfit. Thus, the relaxation mechanism of the misfit strain in the Si_1-xGe_x/Si system changes depending on the lattice misfit.

URL: http://jjap.jsap.jp/link?JJAP/27/1593/
DOI: 10.1143/JJAP.27.1593

References | Citing Articles (15)

1. R. People: IEEE J. Quantum Electron. QE-22 (1986) 1696.
2. H. Jorke and H.-J. Herzog: J. Electrochem. Soc. 133 (1986) 998.
3. R. People, J. C. Bean and V. D. Lang: J. Vac. Sci. & Technol. A3 (1985) 846.
4. H. Daembkes, H.-J. Herzog, H. Kibbel and E. Kasper: IEEE Trans. Electron Devices ED-33 (1986) 633.
5. T. P. Pearsall and J. C. Bean: IEEE Electron Device Lett. EDL-7 (1986) 308.
6. D. V. Lang, R. People, J. C. Bean and A. M. Sergent: Appl. Phys. Lett. 47 (1985) 1333[AIP Scitation].
7. H. Temkim, A. Antreasyan, N. A. Olsson, T. P. Pearsall and J. C. Bean: Appl. Phys. Lett. 49 (1986) 809[AIP Scitation].
8. E. Kasper, H.-J. Herzog and H. Kibbel: Appl. Phys. 8 (1975) 199.
9. E. Kasper and W. Pabst: Thin Solid Films 37 (1976) L5.
10. E. Kasper and H.-J. Herzog: Thin Solid Films 44 (1977) 357.
11. J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara and I. K. Robinson: J. Vac. Sci. & Technol. A2 (1984) 436.
12. A. T. Fiory, J. C. Bean, L. C. Feldman and I. K. Robinson: J. Appl. Phys. 56 (1984) 1227[AIP Scitation].
13. Y. Kohama, Y. Fukuda and M. Seki: Appl. Phys. Lett. 52 (1988) 380[AIP Scitation].
14. B. W. Dodson and J. Y. Tsao: Appl. Phys. Lett. 51 (1987) 1325[AIP Scitation].
15. I. J. Fritz: Appl. Phys. Lett. 51 (1987) 1080[AIP Scitation].
16. Y. Kohama. Y. Watanabe and Y. Fukuda: Jpn. J. Appl. Phys. 26 (1987) L1944[JSAP].
17. J. H. Van der Merwe: J. Appl. Phys. 34 (1962) 123[AIP Scitation].
18. J. W. Matthews, S. Mader and T. B. Light: J. Appl. Phys. 41 (1970) 3800[AIP Scitation].
19. J. W. Matthews and A. E. Blakeslee: J. Cryst. Growth 27 (1974) 118[CrossRef].
20. J. W. Matthews: J. Vac. Sci. & Technol. 12 (1975) 126[AIP Scitation].
21. C. A. Ball and J. H. Van der Merwe: Dislocations in Solid, ed. F. R. N. Nabarro (North-Holland, Amsterdam, 1983) p. 123.
22. R. People and J. C. Bean: Appl. Phys. Lett. 47 (1985) 322 [AIP Scitation][ Errata; 49 (1986) 229[AIP Scitation]].
23. A. T. Fiory, J. C. Bean, R. Hull and S. Nakahara: Phys. Rev. B31 (1985) 4063[APS].
24. K. Rajan and M. Denhoff: J. Appl. Phys. 62 (1987) 1710[AIP Scitation].
25. A. Ishizaka and Y. Shiraki: J. Electrochem. Soc. 133 (1986) 666.
26. P. B. Hirsh, A. Howie, R. B. Nicholson, D. W. Pashley and M. J. Whealan: Electron Microscopy of Thin Crystals (London, Butterworths, 1965), p. 176.
27. H. Strunk, W. Hagen and E. Bauser: Appl. Phys. 18 (1979) 67.
28. W. Hagen and H. Strunk: Appl. Phys. 17 (1978) 85.
29. E. Kasper, H.-J. Herzog, H. Daembkes and G. Abstreiter: Mat. Res. Soc. Symp. Proc. 56 (1986) 347.