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Jpn. J. Appl. Phys. 27 (1988) pp. 1616-1625  |Next Article|  |Table of Contents|
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Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si Structures

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara and Seijiro Furukawa

Graduate School of Science and Engineering, Tokyo Institute of Technology

(Received April 20, 1988; accepted for publication July 23, 1988)

A novel heteroepitaxial method (electron-beam exposure and epitaxy: EBE-epitaxy) has been developed for growing GaAs films on top of CaF2/Si(111) structures. In this method, the surface of CaF2 films is modified by an electron beam (e-beam) under arsenic impingement prior to the growth of GaAs films. It has been found that this EBE-epitaxy is very effective in improving the quality of the GaAs films such as surface morphology, crystallinity and crystallographic orientation. The principal effects in the EBE-epitaxy to improve the crystalline quality are considered based on these experimental results to derive a model of the growth mechanism. Other effects, such as electron energy dependence, substrate temperature dependence during e-beam exposure and GaAs growth temperature dependence, are also investigated systematically. Subsequently, the growth condition for an ideal EBE-epitaxy is discussed.

URL: http://jjap.jsap.jp/link?JJAP/27/1616/
DOI: 10.1143/JJAP.27.1616


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