Jpn. J. Appl. Phys. 27 (1988) pp. 1626-1629  |Next Article|  |Table of Contents|
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A Very-High-Conductivity of In-Doped CdTe Film

Toshiya Hayashi, Tatsuro Suzuki and Yoshinori Ema

(Received April 21, 1988; accepted for publication July 23, 1988)

Very-high-conductivity CdTe films were prepared by co-evaporation of CdTe and In. The highest dark conductivity obtained was 10³ S cm^-1. It is shown that the highest conductivity film contains many In atoms doped interstitially into almost all wide space lattice points and forms a new crystal basis composed of Cd(0 0 0), Te(1/4 1/4 1/4) and In(1/2 1/2 1/2), (3/4 3/4 3/4). The interstitially doped In atoms were stable and did not move from the crystallite into the grain boundary, even when the film was heat-treated.

URL: http://jjap.jsap.jp/link?JJAP/27/1626/
DOI: 10.1143/JJAP.27.1626
KEYWORDS:CdTe, In doping, evaporated film, crystal structure, superlattice

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