Jpn. J. Appl. Phys. 27 (1988) pp. 1718-1722  |Next Article|  |Table of Contents|
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Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGa_1-xAs Layers

Takumi Nittono, Hiroshi Ito, Osaake Nakajima and Tadao Ishibashi

(Received March 9, 1988; accepted for publication July 23, 1988)

Non-alloyed ohmic contacts to n-GaAs using compositionally graded In_xGa_1-xAs layers grown by molecular beam epitaxy are studied. The carrier concentration reduction in the GaAs buffer layer due to low growth temperature is found to increase overall contact resistance for an n⁺-InAs/In_xGa_1-xAs(x=1→0)/GaAs structure. The lowest specific contact resistance (ρ_c) ever reported, 5×10^-9 Ω · cm², is obtained with a 2×10¹⁹ cm^-3 Si-doped structure grown at 450°C. A similar ρ_c value is also obtained when the InAs mole fraction is higher than 0.7. Using WSi as a contact metal, a refractory ohmic contact is realized in which ρ_c remains less than 2×10^-7 Ω · cm² under annealing up to 800°C.

URL: http://jjap.jsap.jp/link?JJAP/27/1718/
DOI: 10.1143/JJAP.27.1718
KEYWORDS:non-alloyed ohmic contact, gallium arsenide, indium gallium arsenide, indium arsenide, molecular beam epitaxy, contact resistance, misfit dislocation, tungsten sillicide

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