Jpn. J. Appl. Phys. 27 (1988) pp. 1759-1763 |Next Article| |Table of Contents|
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Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation
Tetsuo Morita and
Hisao Hashimoto
Optoelectronics Joint Research Laboratory
(Received April 20, 1988; revised manuscript revised June 22, 1988; accepted for publication July 23, 1988)
A new calculation method of secondary electron intensity profiles in the case of scanning the focused ion beam across an alignment mark is proposed. The secondary electron intensity profiles depend on the energy of the incident ion, surface conditions of the target material and topography of the substrate, etc. Secondary electron intensity profiles can be easily calculated for variation of geometrical parameters without Monte Carlo calculation. The collection efficiency of secondary electrons is also included in this calculation. The calculated results agree with the measured ones.
URL:
http://jjap.jsap.jp/link?JJAP/27/1759/
DOI: 10.1143/JJAP.27.1759
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