Jpn. J. Appl. Phys. 27 (1988) pp. 1770-1771 |Next Article| |Table of Contents|
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Short Note
Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
Chusuke Munakata,
Hiroshi Tamura,
Noriaki Honma,
Masami Ozawa and
Kunihiro Yagi
Central Research Laboratory, Hitachi, Ltd.
(Received May 11, 1988; accepted for publication July 23, 1988)
Ac surface photovoltages in a CZ-grown p-type silicon wafer oxidized with water-free dry oxidation deviate from the normal inverse frequency characteristics observed in the wafer oxidized with the conventional wet oxidation. This is because of dense interface traps inherent to the water-free oxidation.
URL:
http://jjap.jsap.jp/link?JJAP/27/1770/
DOI: 10.1143/JJAP.27.1770
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