Jpn. J. Appl. Phys. 27 (1988) pp. 2094-2097  |Next Article|  |Table of Contents|
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Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films

Kentaro Ito and Tatsuo Nakazawa

(Received June 24, 1988; accepted for publication September 17, 1988)

Quaternary stannite-type semiconductor films of Cu₂CdSnS₄ and Cu₂ZnSnS₄ with (112) orientation were deposited on heated glass substrates using atom beam sputtering. These p-type films showed resistivities which were decreasing functions of the substrate temperature up to 240°C. The films had an absorption coefficient larger than 1 × 10⁴ cm^-1 in the visible wavelength range. The direct optical band gaps of the (112) oriented polycrystalline films were estimated as 1.06 eV and 1.45 eV for Cu₂CdSnS₄ and Cu₂ZnSnS₄, respectively.

URL: http://jjap.jsap.jp/link?JJAP/27/2094/
DOI: 10.1143/JJAP.27.2094

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