Jpn. J. Appl. Phys. 27 (1988) pp. 2192-2198  |Next Article|  |Table of Contents|
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Effects of Ions on Properties of a-Si:H Films Prepared by ECR Plasma CVD Method

Koji Akiyama, Eiichiro Tanaka, Akio Takimoto and Masanori Watanabe

(Received January 11, 1988; revised manuscript revised August 10, 1988; accepted for publication October 22, 1988)

A study has been made on the effect of ions on the structural and electrical properties of a-Si:H films prepared by ECR plasma CVD method using H₂, He and Ar as a plasma generation gas and SiH₄. Deposition rates of over 10 µm/h can be achieved with H₂ and He plasma, while Ar plasma generation attains half the deposition rates of H₂ and He plasma. The increase of (SiH₂)_n chains in films is related to the reduced microwave power, increased pressure and positive DC bias voltage being applied to the substrates. The concentration of (SiH₂)_n chains dominates the photoconductivities. Films having the low concentration of (SiH₂)_n have ηµτ of 6×10^-7 cm²/V after the depositions without substrate heating and 6×10^-6 cm²/V after annealing at 280degC for 30 min. The energy transfer of incident ions to the film surface plays the most important role in obtaining highly photoconductive films.

URL: http://jjap.jsap.jp/link?JJAP/27/2192/
DOI: 10.1143/JJAP.27.2192

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