Jpn. J. Appl. Phys. 27 (1988) pp. 2209-2217  |Next Article|  |Table of Contents|
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Lattice Defects in High-Dose As Implantation into Localized Si Area

Masao Tamura and Masatada Horiuchi

(Received September 22, 1988; accepted for publication October 22, 1988)

Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distributions of lattice defects generated in high-dose (5×10¹⁵ and 2×10¹⁶ ions/cm²), 80 and 150 keV As-implanted, and annealed Si through 1.0 and 1.5 µm windows on (100) Si. Amorphous Si (a-Si) layer thicknesses formed by implantation range between projected range, R_p, +(5∼6) standards deviation, ΔR_p, with a lateral spread of about 0.18 times a-Si thickness under the mask edge. Typical post-annealed, induced defects in such amorphous layers are mask edge defects composed of dislocation lines caused by a complicated process for recovering mask edge amorphous layers, together with commonly observed dislocation loops in high-dose As implantation. Interaction between dislocation loops and knocked-on oxygen atoms is discussed, particularly concerning the elimination or survival of As-rich precipitate-induced dislocation loops.

URL: http://jjap.jsap.jp/link?JJAP/27/2209/
DOI: 10.1143/JJAP.27.2209

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