Jpn. J. Appl. Phys. 27 (1988) pp. 2265-2270  |Next Article|  |Table of Contents|
|Full Text PDF (1136K)| |Buy This Article|

Characteristics of DC SQUIDs Patterned on Highly Granular Y–Ba–Cu–O Thin Films

Ichiro Takeuchi, Jaw-Shen Tsai, Hisanao Tsuge and Noritsugu Matsuoka

(Received September 26, 1988; accepted for publication October 22, 1988)

Measurements have been made of the properties of thin granular film DC SQUIDs fabricated from the high T_c superconductor Y–Ba–Cu–O, paying special attention to peculiar effects arising from the unique granularity of the film. The output voltage modulation of the SQUIDs was found to be very much lower than expected from the theory, and we present here several possible explanations for it, based on such factors as the asymmetry of the junctions and high kinetic inductance of the film. Multiple periodicities and phase jumps on VΦ-characteristics were observed. Normal operations of the SQUIDs were observed till ∼65 K. Estimating from the best data, the equivalent flux noise was below 3×10^-4 Φ₀/Hz^1/2 in the frequency range above 600 Hz at around 50 K.

URL: http://jjap.jsap.jp/link?JJAP/27/2265/
DOI: 10.1143/JJAP.27.2265

References | Citing Articles (13)

1. R. H. Koch, C. P. Umbach, G. J. Clark, P. Chaudhari and R. B. Laibowitz: Appl. Phys. Lett. 51 (1987) 200[AIP Scitation].
2. J. E. Zimmerman, J. A. Beall, M. W. Cromar and R. H. Ono: Appl. Phys. Lett 51 (1987) 617[AIP Scitation].
3. C. M. Pegrum, G. B. Donaldson, A. H. Carr and A. Hendry: Appl. Phys. Lett. 51 (1987) 1364[AIP Scitation].
4. I. K. Harvey, R. A. Binks and R. Driver: Appl. Phys. Lett. 52 (1987) 1634[AIP Scitation].
5. R. Yuasa, M. Nakao, S. Fujiwara, K. Kaneda, S. Suzuki and A. Mizukami: Extended Abstracts of 5th International Workshop on Future Electron Devices, Miyagi-Zao (Research and Development Association for Future Electron Devices, Tokyo, 1988) p. 245.
6. B. Hauser, M. Diegel and H. Rogalla: Appl. Phys. Lett. 52 (1987) 844[AIP Scitation].
7. M. J. Ferrari, M. Johnson, F. C. Wellstood and J. Clarke: Appl. Phys. Lett. 53 (1988) 695[AIP Scitation].
8. P. Chaudhari, J. Mannhart, D. Dimos, C. C. Tsuei, J. Chi, M. M. Oprysko and M. Scheuermann: Phys. Rev. Lett. 60 (1988) 1653[APS].
9. H. Tsuge, S. Matsui, N. Matsukara, Y. Kojima and Y. Wada: Extended Abstracts 20 the (1988 Int.) Conf. Solid State Devices & Materials (Business Center for Academic Societies, Tokyo, 1988) p. 451.
10. M. B. Ketchen: IEEE Trans. Magn. MAG-23 (1987) 1650.
11. G. Deutscher and K. A. Mullen: Phys. Rev. Lett. 59 (1987) 1745[APS].
12. K. K. Likharev: Rev. Mod. Phys. 51 (1979) 101[APS].
13. C. D. Tesche and J. Clarke: J. Low. Temp. Phys. 29 (1977) 301[CrossRef].
14. M. S. Dilorio and M. R. Beasley: IEEE Trans. Magn. MAG-21 532.
15. M. Matsuda and S. Kuriki: Appl. Phys. Lett. 53 (1985) 621[AIP Scitation].
16. P. K. Hansma and J. R. Kirtley: J. Appl. Phys. 45 (1974) 4016[AIP Scitation].
17. J. C. Gallop, C. D. Langham and W. J. Radcliffe: Phys. Lett. A 128 (1988) 222.
18. R. Kita, M. Nagata, H. Shintaku, H. Nojima, S. Tsuchimoto, N. Hashizume and S. Kataoka: Extended Abstracts of 5th International Workshop on Future Electron Devices, Miyagi-Zao (1988) p. 231.