Jpn. J. Appl. Phys. 27 (1988) pp. 2315-2323  |Next Article|  |Table of Contents|
|Full Text PDF (1358K)| |Buy This Article|

Thermal Warpage of Large Diameter Czochralski-Grown Silicon Wafers

Hirofumi Shimizu and Takaaki Aoshima¹

(Received February 15, 1988; revised manuscript revised September 5, 1988; accepted for publication October 22, 1988)

Thermal warping of large diameter Czochralski-grown silicon wafers as affected by oxygen precipitation is investigated both experimentally and theoretically. The difference of wafer warpage and its shape between the heating and cooling processes is clarified by thermal stresses calculated from temperature gradients in wafers for each process. The critical temperatures for the slip occurrence are determined for the heating and cooling processes as a function of the microdefect density. Then, the optimized process conditions to avoid slip dislocations are obtained experimentally. The critical stress curve for the processed wafers in MOS devices is determined by comparison with the thermal stress curves calculated under various process conditions, and thereby predicting the slip-free conditions for wafers in a row with various diameters from 100 to 200 mm.

URL: http://jjap.jsap.jp/link?JJAP/27/2315/
DOI: 10.1143/JJAP.27.2315

References | Citing Articles (7)

1. K. Morizane and P. S. Gleim: J. Appl. Phys. 40 (1969) 4104[AIP Scitation].
2. H. R. Huff, R. C. Bracken and S. N. Rea: J. Electrochem. Soc. 118 (1971) 143.
3. S. M. Hu: Appl. Phys. Lett. 22 (1973) 261[AIP Scitation].
4. A. Wayne Fisher and G. L. Schnable: J. Electrochem. Soc. 123 (1978) 434.
5. S. M. Hu: J. Vac. Sci. & Technol. 14 (1977) 17[AIP Scitation].
6. K. G. Moerschel, C. W. Pearce and R. E. Reusser: Semiconductor Silicon 1977, eds. H. R. Huff and E. Sirtl (The Electrochem. Soc. Inc., Princeton N. J., 1977) p. 170.
7. B. Leroy and C. Plougonven: J. Electrochem. Soc. 127 (1980) 961.
8. Shin. Takasu, H. Otsuka, N. Yoshihiro and T. Oku: Proc. 12th Conf. Solid State Devices, ToKyo, 1980, Jpn. J. Appl. Phys. 20 (1981) Suppl. 20-1, p. 25[JSAP].
9. I. Matsuba, K. Mokuya and T. Aoshima: Proc. IEEE Int. Electron Devices Meeting, Los Angeles, 1986, (IEEE, New York, 1986) p. 530.
10. A. E. Widmer and W. Rehwald: J. Electrochem. Soc. 133 (1986) 2403.
11. S. M. Hu: J. Appl. Phys. 40 (1969) 4413[AIP Scitation].
12. W. A. Porter, D. D. Drew and J. S. Under: J. Appl. Phys. 43 (1972) 1477[AIP Scitation].
13. A. Yoshinaka and Y. Sugita: 145th Electrochem. Soc. Spring Meeting, San Francisco, Extended Abstract No. 67 (1974) p. 171.
14. E. Kasper and H. Clauss: Wiss. Ber. AEG-TELEFUNKEN 48 (1975) 183.
15. E. W. Hearn, E. H. Te Kaat and G. H. Schwuttke: Microelectron. Reliability 15 (1976) 61.
16. G. Bentini, L. Correra and C. Donolato: J. Appl. Phys. 56 (1984) 2922[AIP Scitation].
17. P. Haasen: Z. Phys. 167 (1962) 461.
18. H. Alexander and P. Haasen: Solid State Phys. 22 (1968) 28.
19. K. Sumino: Mater. Sci. Eng. 13 (1974) 269.
20. I. Yonenaga and K. Sumino: Phys. Status Solidi A 50 (1978) 685.
21. M. Suezawa, K. Sumino and I. Yonenaga: Phys. Status Solidi A 51 (1979) 217.
22. K. Mokuya and I. Matsuba: to be published in IEEE Trans. Electron. Devices ED 36 (1989).
23. For example, D. M. Maher, A. Staudinger and J. R. Patel: J. Appl. Phys. 47 (1976) 3813[AIP Scitation].
24. J. R. Patel: Discuss. Faraday Soc. 38 (1964) 201.
25. I. Yonenaga and K. Sumino: Jpn. J. Appl. Phys. 21 (1982) 47[JSAP].
26. H. Shimizu, T. Watanabe and Y. Kakui: Jpn. J. Appl. Phys. 24 (1985) 815[JSAP].
27. Chang-Ou Lee and P. J. Tobin: J. Electrochem. Soc. 133 (1986) 2147.
28. S. Kishino, T. Aoshima, A. Yoshinaka, H. Shimizu and M. Ono: Jpn. J. Appl. Phys. 23 (1984) L9[JSAP].
29. Y. Sugita, T. Kato and M. Tamura: J. Appl. Phys. 42 (1971) 5847[AIP Scitation].
30. M. W. Jenkins: J. Electrochem. Soc. 124 (1977) 757.
31. H. Shimizu, M. Fujita, T. Aoshima and Y. Sugino: Jpn. J. Appl. Phys. 25 (1986) 68[JSAP].
32. K. Mokuya, I. Matsuba and T. Aoshima: Trans. Inst. Electron. & Communi. Eng. Jpn. J70-C (1987) 324.
33. S. M. Hu, S. P. Klepner, R. O. Schwenker and D. K. Seto: J. Appl. Phys. 47 (1976) 4098[AIP Scitation].
34. S. Mahajan, D. Brasen and P. Haasen: Acta Metall. 27 (1979) 1165.
35. L. D. Dyer, H. R. Huff and W. W. Boyd: J. Appl. Phys. 42 (1971) 5680[AIP Scitation].
36. W. Schröter, H. G. Brion and H. Siethoff: J. Appl. Phys. 54 (1983) 1816[AIP Scitation].