Jpn. J. Appl. Phys. 28 (1989) pp. 2035-2037  |Previous Article| |Next Article|  |Table of Contents|
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Development Methods for Submicron Optical Lithography

Masayuki Endo, Masaru Sasago, Hideo Nakagawa, Atsushi Ueno and Noboru Nomura

Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd

(Received April 19, 1989; accepted for publication July 15, 1989)

The effects of development methods on resist pattern fabrication have been examined. The automated immersion, puddle and spray development methods can be compared and characterized. The immersion development could fabricate high-aspect-ratio 0.6 micron line-and space patterns and had the largest process latitude for submicron optical lithography. The spray development has been found not to be good except for sensitivity.

DOI: 10.1143/JJAP.28.2035
KEYWORDS:lithography, photoresist, development method, contrast, linewidth control

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