Jpn. J. Appl. Phys. 28 (1989) pp. 2035-2037  |Previous Article| |Next Article|  |Table of Contents|
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Development Methods for Submicron Optical Lithography

Masayuki Endo, Masaru Sasago, Hideo Nakagawa, Atsushi Ueno and Noboru Nomura

Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd

(Received April 19, 1989; accepted for publication July 15, 1989)

The effects of development methods on resist pattern fabrication have been examined. The automated immersion, puddle and spray development methods can be compared and characterized. The immersion development could fabricate high-aspect-ratio 0.6 micron line-and space patterns and had the largest process latitude for submicron optical lithography. The spray development has been found not to be good except for sensitivity.

URL: http://jjap.jsap.jp/link?JJAP/28/2035/
DOI: 10.1143/JJAP.28.2035
KEYWORDS:lithography, photoresist, development method, contrast, linewidth control


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References | Citing Articles (3)

  1. M. Hatzakis: Solid State Technol. 24 (1981) 74.
  2. B. J. Lin: Solid State Technol. 26 (1983) 105.
  3. B. F. Griffing and P. R. West: Polym. Eng. Sci. 23 (1983) 947.
  4. B. F. Griffing and P. R. West: IEEE Electron Device Lett. EDL-4 (1983) 14.
  5. E. Ailing and C. Stauffer: Proc. SPIE 539 (1985) 194[AIP Scitation].
  6. R. M. R. Gijsen, H. J. J. Kroon, F. A. Vollenbroek and R. Vervoordeldonk: Proc. SPIE 631 (1986) 108[AIP Scitation].
  7. F. Coopmans and B. Roland: Solid State Technol. 30 (1987) 93.
  8. J. S. Petersen and A. E. Kozlowski: Proc. SPIE 469 (1984) 46[AIP Scitation].
  9. W. D. Hinsberg and M. L. Gutierrez: Proc. SPIE 469 (1984) 57[AIP Scitation].
  10. T. Batchelder: Am. Chem. Soc. Symp. Ser. 274 (1985) 108.
  11. L. F. Thompson: Solid State Technol. 17 (1974) 27.

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