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Jpn. J. Appl. Phys. 28 (1989) pp. L340-L342  |Next Article|  |Table of Contents|
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Letter

Studies on an (NH₄)₂S_x-Treated GaAs Surface Using AES, LEELS and RHEED

Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi, Koji Ando¹, Koichiro Saiki¹ and Atsushi Koma¹

Institute of Materials Science, University of Tsukuba
¹Department of Chemistry, University of Tokyo

(Received January 14, 1989; accepted for publication February 13, 1989)

Surface properties of (NH₄)₂S_x-treated GaAs (100), (111)Ga and (111)As planes were studied by means of Auger electron spectroscopy (AES), low-energy electron energy loss spectroscopy (LEELS) and reflection high-energy electron diffraction (RHEED). We found that oxide-free and sulfur-terminated GaAs surfaces produced by the (NH₄)₂S_x treatment provided the reduction of interface state density. Furthermore, comparison of various planes revealed that (i) sulfur atoms could combine with both Ga and As and (ii) bonding between Ga and S was stronger than that between As and S.

URL: http://jjap.jsap.jp/link?JJAP/28/L340/
DOI: 10.1143/JJAP.28.L340

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References | Citing Articles (63)

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