Jpn. J. Appl. Phys. 29 (1990) pp. 2698-2704  |Next Article|  |Table of Contents|
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Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation

Yunosuke Kawazu, Hiroshi Kudo, Seinosuke Onari and Toshihiro Arai

(Received August 3, 1990; accepted for publication October 20, 1990)

We have investigated the silicidation process of the Ni/a-Si:H system on a fused silica substrate mainly by in situ electric resistance measurement. A rise of the resistance is observed in the temperature range of 480–510°C of the resistance curve at a heating rate of 2 K/min. The results of the RBS measurements and the XRD measurements show that the rise of the resistance originates from the diffusion of Ni from the NiSi₂ layer to a-Si:H film, and that the a-Si:H crystallizes during the diffusion. Noting that the crystallization temperature of a-Si:H film is higher than 700°C, the present crystallization occurs at a much lower temperature. It is suggested that this low-temperature crystallization is induced by heterogeneous nucleation, where the NiSi₂ becomes the nucleus for Si crystallization.

URL: http://jjap.jsap.jp/link?JJAP/29/2698/
DOI: 10.1143/JJAP.29.2698

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