Jpn. J. Appl. Phys. 29 (1990) pp. 2746-2750  |Next Article|  |Table of Contents|
|Full Text PDF (731K)| |Buy This Article|

Photocarrier Generation in a Layered Organic Photoreceptor Containing Azo Pigment

Minoru Umeda, Tatsuya Niimi and Mitsuru Hashimoto

(Received July 11, 1990; accepted for publication October 20, 1990)

Studies have been made on photocarrier generation which is caused in a highly sensitive layered organic photoreceptor for electrophotography and produces a photoinduced discharge. A series of experiments has been carried out on a layered photoreceptor which has a carrier generation layer (CGL) containing a fluorenone bisazo pigment as the main component. As a result, we have found that (1) excitons are produced in the bulk of the CGL by photon absorption, (2) the excitons dissociate into free carriers (negative electrons and positive holes) at the interface between the CGL and a carrier transport layer (CTL), and (3) the positive holes are immediately injected into the CTL, so that few free carriers recombine.

URL: http://jjap.jsap.jp/link?JJAP/29/2746/
DOI: 10.1143/JJAP.29.2746

References | Citing Articles (26)

1. K. Ohta: Electrophotography 25 (1986) 303.
2. H. Kokado: Yūki Denshiidō Process (Electron Transfer Processes in Organic Chemistry), ed. The Chemical Society of Japan (Gakkai Shuppan Center, Tokyo, 1988) p. 186 [in Japanese].
3. A. K. Ghosh and T. Feng: J. Appl. Phys. 49 (1978) 5982[AIP Scitation].
4. R. O. Loutfy and J. H. Sharp: J. Chem. Phys. 71 (1979) 1211[AIP Scitation].
5. J. Mizuguchi: Jpn. J. Appl. Phys. 20 (1981) 713[JSAP].
6. J. Mizuguchi: Jpn. J. Appl. Phys. 21 (1982) 822[JSAP].
7. K. Nakatani, J. Hanna and H. Kokado: Electrophotography 24 (1985) 8.
8. M. Umeda: Electrophotography 27 (1988) 539.
9. M. Hashimoto: Electrophotography 25 (1986) 230.
10. P. J. Melz, R. B. Champ, L. S. Chang, C. Chiou, G. S. Keller, L. C. Liclican, R. R. Neiman, M. D. Shattuck and W. J. Weiche: Photogra. Sci. Eng. 21 (1977) 73.
11. P. M. Borsenberger and A. I. Ateya: J. Appl. Phys. 49 (1978) 4035[AIP Scitation].
12. J. Mort: Electronic and Structural Properties of Amorphous Semiconductors, eds. P. G. LeComber and J. Mort (Academic Press, London and New York, 1973) p. 493.
13. L. Onsager: J. Chem. Phys. 2 (1934) 599[AIP Scitation].
14. L. Onsager: Phys. Rev. 54 (1938) 554[APS].
15. P. M. Borsenberger and D. C. Hoesterey: J. Appl. Phys. 51 (1980) 4248[AIP Scitation].