Jpn. J. Appl. Phys. 29 (1990) pp. 48-52  |Next Article|  |Table of Contents|
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Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

Syunji Nakata, Syoji Yamada, Yoshiro Hirayama, Tadashi Saku and Yoshiji Horikoshi

(Received July 27, 1989; accepted for publication November 18, 1989)

Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as L_in∝G^0.7 from the gate voltage dependence on fluctuation amplitude.

URL: http://jjap.jsap.jp/link?JJAP/29/48/
DOI: 10.1143/JJAP.29.48

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