Jpn. J. Appl. Phys. 29 (1990) pp. L1130-L1132  |Table of Contents|
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GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode

Yoshihiro Imajo, Akihiko Kasukawa, Susumu Kashiwa and Hiroshi Okamoto

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Electronics Letters 35 (1999) 49
    Near room-temperature continuous-wave operation of electrically pumped 1.55 [micro sign]m vertical cavity lasers with InGaAsP/InP bottom mirror
    S. Rapp, F. Salomonsson, J. Bentell, I. Sagnes, H. Moussa, C. Me?riadec, R. Raj, K. Streubel, and M. Hammar
  2. Japanese Journal of Applied Physics 38 (1999) 1261
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  3. Japanese Journal of Applied Physics 36 (1997) 5365
    Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
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  4. IEEE Photonics Technology Letters 8 (1996) 1121
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    K. Streubel, S. Rapp, J. Andre, and J. Wallin
  5. Optical Review 2 (1995) 323
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  6. Semiconductor Science and Technology 10 (1995) 1283
    P Guy, K Woodbridge, S K Haywood, and M Hopkinson
  7. Applied Physics Letters 64 (1994) 1463
    Low threshold, wafer fused long wavelength vertical cavity lasers
    J. J. Dudley, D. I. Babic?, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, and J. E. Bowers
  8. Electronics Letters 30 (1994) 704
    Optically pumped all-epitaxial wafer-fused 1.52 [micro sign]m vertical-cavity lasers
    D.I. Babic?, J.J. Dudley, K. Streubel, R.P. Mirin, E.L. Hu, and J.E. Bowers
  9. Electronics Letters 30 (1994) 1526
    Highly doped 1.55 [micro sign]m GaxIn1-xAs/InP distributed Bragg reflector stacks
    P. Guy, K. Woodbridge, S.K. Haywood, and M. Hopkinson
  10. Japanese Journal of Applied Physics 33 (1994) L402
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  11. Japanese Journal of Applied Physics 33 (1994) 4614
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  12. Materials Science and Engineering B 28 (1994) 285
    High-reflective 1.5 μm GaInAsP/InP Bragg reflectors grown by metal organic vapor phase epitaxy
    K. Streubel, J. Wallin, L. Zhu, G. Landgren, and I. Queisser
  13. Electronics and Communications in Japan (Part II Electronics) 76 (1993) 34
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  14. Applied Physics Letters 61 (1992) 3095
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  15. Electronics and Communications in Japan (Part II Electronics) 75 (1992) 12
    Surface-emitting semiconductor lasers and surface-operating functional devices
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