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Jpn. J. Appl. Phys. 29 (1990) pp. L17-L19  |Next Article|  |Table of Contents|
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Letter

Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer

Makoto Uneta, Yoshio Watanabe, Yukio Fukuda and Yoshiro Ohmachi

NTT Applied Electronics Laboratories

(Received September 28, 1989; revised manuscript revised October 25, 1989; accepted for publication December 6, 1989)

The surface domain structures of As-adsorbed Si(100) substrates and of subsequently overgrown GaAs films are observed by reflection high energy electron diffraction. Single-domain Si(100)2×1 is obtained by using samples cut at 4° from the (100) crystal axis towards (011). Even at a low substrate temperature of 200°C, As adsorption causes the RHEED pattern to rotate from 2×1 to 1×2, indicating formation of As-As dimers on the Si(100). This surface reconstruction does not change after thermal annealing at 650°C. Furthermore, GaAs layers are grown on two types of As-adsorbed Si(100) substrates. One is subjected to the subsequent 650°C annealing and the other has no subsequent annealing. Upon two-step growth of GaAs layers at 400°C and 630°C on these As-adsorbed Si substrates, both final GaAs surfaces reveal the 4×2 reconstruction, independent of the subsequent annealing of As-adsorbed Si substrates. Previous observation that the domain structure of GaAs on As-adsorbed Si depends on the As-adsorption temperature, is assigned to the presence of the double-domain structure of the Si(100) surface.

URL: http://jjap.jsap.jp/link?JJAP/29/L17/
DOI: 10.1143/JJAP.29.L17

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