Jpn. J. Appl. Phys. 29 (1990) pp. L188-L190 |Next Article| |Table of Contents|
|Full Text PDF (599K)| |Buy This Article|
Letter
Proposal for Device Transplantation using a Focused Ion Beam
Tsuyoshi Ohnishi,
Yoshimi Kawanami and
Tohru Ishitani
Central Research Laboratory, Hitachi, Ltd.
(Received November 9, 1989; accepted for publication December 6, 1989)
Device transplantation using a focused ion beam (FIB) has been proposed as a new high-resolution technique for microdevice assembly as well as device repair. FIB sputtering, redeposition, and FIB-induced deposition each work as a cutter or a fixer. Feasibility experiments have been carried out both for dummy-device transplantation on a silicon substrate and for microgear fabrication.
URL:
http://jjap.jsap.jp/link?JJAP/29/L188/
DOI: 10.1143/JJAP.29.L188
KEYWORDS:device transplantation, focused ion beam, microdevice, sputtering, deposition
- J. G. Black, S. P. Doran, M. Rothschild and D. J. Ehrlich:
Appl. Phys. Lett. 50 (1987) 1016[AIP Scitation].
- J. Melngailis, C. R. Musil, E. H. Stevens, M. Utlaut, E. M. Kellog, R. T. Post, M. W. Geis and R. W. Mountain: J. Vac. Sci. & Technol. B4 (1986) 176.
- L. R. Harriott, A. Wagner and F. Fritz: J. Vac. Sci. & Technol. B4 (1986) 181.
- T. Yasue, Y. Mashiko, H. Morimoto, T. Nishioka, H. Koyama, T. Kaito and T. Adachi: Proc. 12th Int. Symp. Hosei Univ., 1987, eds. T. Sebe and Y. Yamamoto. (Hosei Univ. Press, Tokyo, 1988) p. 301.
- J. R. A. Cleaver, E. C. G. Kirk, R. J. Young and H. Ahmed: J. Vac. Sci. & Technol. B6 (1988) 1026.
- D. C. Shaver: Solid State Technol. February (1984) 135.
- S. M. Sze: Physics of Semiconductor Devices (John Wiely & Sons, New-York, 1981) p. 492.
- R. T. Howe: J. Vac. Sci. & Technol. B6 (1988) 1809.
- K. Sato: Seimitsukougaku 54 (1988) 1630 [in Japanese].
- G. K. Bennig and H. Rohrer:
Rev. Mod. Phys. 59 (1987) 615[APS].
- Y. Ochiai, K. Gamo, S. Namba, K. Shioyama, A. Masuyama, T. Shiokawa and Y. Toyoda: J. Vac. Sci. & Technol. B5 (1987) 423.
- A. D. Dubner, G. M. Shedd, H. Lezec and J. Melngailis: J. Vac. Sci. & Technol. B5 (1987) 1434.
- Y. Madokoro, T. Ohnishi and T. Ishitani: 20th Symp. Ion Implantation and Submicron Fabrication, 1989 (The Institute of Physical and Chemical Research, Wako-Shi, 1989) p. 133.
- T. Ishitani and T. Ohnishi:
Jpn. J. Appl. Phys. 28 (1989) L320[JSAP].
- H. W. Koops, R. Weiel, D. P. Kern and T. H. Baum: J. Vac. Sci. & Technol. B6 (1988) 477.
- S. Matsui and K. Mori:
Appl. Phys. Lett. 51 (1987) 1498[AIP Scitation].
- L. Konstantinov, R. Nowak and P. Hess: Appl. Phys. A47 (1988) 171.
- S. Shouji, M. Esashi and T. Matso: Sensors and Actuators 14 (1988) 125.
- O. J. Prohaska, F. Kohl, P. Goiser, F. Olcaytug, G. Urban, A. Jachimowicz, K. Pirker, W. Chu, M. Patil, J. LaManna and R. Vollmer: Transducers '87 (1987) 812.
