Jpn. J. Appl. Phys. 29 (1990) pp. L1881-L1883 |Next Article| |Table of Contents|
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Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
Research Institute of Electrical Communication, Tohoku University
(Received June 11, 1990; accepted for publication September 10, 1990)
Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.
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