Jpn. J. Appl. Phys. 29 (1990) pp. L191-L194 |Next Article| |Table of Contents|
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Letter
Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
Akira Tanaka,
Tetuo Yamaji,
Akira Uchiyama,
Takahisa Hayashi,
Toshiyuki Iwabuchi and
Satoshi Nishikawa
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
(Received September 6, 1989; accepted for publication January 11, 1990)
A 0.1- µm-deep p+/n junction was formed by the Si+ preamorphization method. The thickness of the preamorphized layer and the junction depth were optimized systematically. It was found that the junction must be formed at a depth 70–90 nm greater than that of the amorphous/crystal (a/c) interface to reduce leakage current density J1 to less than 1×10-8 A/cm2. Furthermore it was confirmed that the preamorphized layer thickness influences the dependence of J1 on the distance between the junction and a/c interface and that a thinner preamorphized layer forms a thinner or lower-defect-density residual defect layer.
URL:
http://jjap.jsap.jp/link?JJAP/29/L191/
DOI: 10.1143/JJAP.29.L191
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