Quick Jump

Jpn. J. Appl. Phys. 29 (1990) pp. L2163-L2164  |Next Article|  |Table of Contents|
|Full Text PDF (273K)| |Buy This Article|

Letter

High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

Hiromu Shiomi, Yoshiki Nishibayashi and Naoji Fujimori

Itami Research Laboratories, Sumitomo Electric Industries, Ltd.

(Received June 22, 1990; accepted for publication November 5, 1990)

High-voltage Schottky diodes have been fabricated on diamond epitaxial films with the structure: metal/undoped diamond/p⁺-type diamond. The films were epitaxially grown on synthesized single-crystal diamonds (100) by microwave plasma-assisted chemical vapor deposition (CVD) using H₂ and CH₄. B₂H₆ was used at B₂H₆/CH₄=167 ppm for p⁺ diamond. Al Schottky electrodes and Ti ohmic electrodes were formed by an e-beam evaporation method and a thermal evaporation method, respectively. The forward current was independent of temperature because of the Fermi degeneracy in p⁺-type diamond. These diodes had a breakdown voltage of 520 V.

URL: http://jjap.jsap.jp/link?JJAP/29/L2163/
DOI: 10.1143/JJAP.29.L2163
KEYWORDS:diamond epitaxial film, plasma CVD, Schottky diode, high voltage

|Full Text PDF (273K)| |Buy This Article| Citation: Plain Text BiBTeX EndNote(RIS) RSS

---

References | Citing Articles (27)

1. V. K. Bazhenov, I. M. Viokulin and A. G. Gonar: Sov. Phys. Semicond. 19 (1985) 829.
2. L. Reggiani, S. Bosi, C. Canali, F. Nava and S. F. Kozlov: Solid State Commun. 30 (1979) 333.
3. A. V. Bogdanov, I. M. Vikulin and T. V. Bogdanova: Sov. Phys. Semicond. 16 (1982) 720.
4. E. A. Konoirova, Yu. A. Kuznetsov, V. F. Sergienko, S. D. Tkachenko, A. V. Tsikanov, A. V. Spitsyn and Yu. Z. Danyushevski: Sov. Phys. Semicond. 17 (1983) 146.
5. Y. S. Touloukian, R. W. Powell, C. Y. Ho and P. G. Klements: Thermophysical Properties of Matter (IFI/Plenum, New York, 1970) Vol. 2, p. 12.
6. N. Fujimori, T. Imai and A. Doi: Vacuum 36 (1986) 99.
7. H. Shiomi, K. Tanabe, Y. Nishibayashi and N. Fujimori: Jpn. J. Appl. Phys. 29 (1990) 34[JSAP].
8. H. Shiomi, H. Nakahata, T. Imai, Y. Nishibayashi and N. Fujimori: Jpn. J. Appl. Phys. 28 (1989) 758[JSAP].
9. H. Shiomi, Y. Nishibayashi and N. Fujimori: Jpn. J. Appl. Phys. 28 (1989) L2153[JSAP].
10. S. A. Grot, G. Sh. Gildenblat, C. W. Hatfield, C. R. Wronski, A. R. Badzian, T. Badzian and R. Messier: IEEE Electron Device Lett. 11 (1990) 100[CrossRef].

---