Jpn. J. Appl. Phys. 29 (1990) pp. L2163-L2164
|Table of Contents|
|Abstract| |Full Text PDF (273K)| |Buy This Article|
High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films
Hiromu Shiomi, Yoshiki Nishibayashi and Naoji Fujimori
Articles citing this article
The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.
-
Applied Physics Letters 100 (2012) 122109
- Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices
-
- R. Issaoui, J. Achard, A. Tallaire, F. Silva, A. Gicquel, R. Bisaro, B. Servet, G. Garry, and J. Barjon
-
physica status solidi (a) 208 (2011) 2023
- Influence of oxygen addition on the crystal shape of CVD boron doped diamond
-
- R. Issaoui, J. Achard, F. Silva, A. Tallaire, V. Mille, and A. Gicquel
-
Chinese Physics Letters 20 (2003) 127
- Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure
-
- Wang Cheng-Xin, Gao Chun-Xiao, Liu Hong-Wu, Han Yong-Hao, Luo Ji-Feng, and Shen Cai-Xia
-
Diamond and Related Materials 12 (2003) 1422
- Preparation of low-threshold and high current rectifying heterojunction using B-doped diamond grown on Si-treated c-BN crystals
-
- C.X. Wang, G.W. Yang, T.C. Zhang, H.W. Liu, Y.H. Han, J.F. Luo, C.X. Gao, and G.T. Zou
-
Diamond and Related Materials 12 (2003) 1548
- Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film
-
- C.X. Wang, G.W. Yang, T.C. Zhang, H.W. Liu, Y.H. Han, J.F. Luo, C.X. Gao, and G.T. Zou
-
Chinese Physics Letters 19 (2002) 1513
- Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN
-
- Wang Cheng-Xin, Gao Chun-Xiao, Zhang Tie-Chen, Liu Hong-Wu, Li Xun, Han Yong-Hao, Luo Ji-Feng, and Shen Cai-Xia
-
Applied Surface Science 146 (1999) 245
- Formation of backcontacts on diamond electron emitters
-
- T Yamada
-
Journal of Applied Physics 81 (1997) 6815
- Carrier transport mechanism of Ohmic contact to p-type diamond
-
- M. Yokoba, Yasuo Koide, A. Otsuki, F. Ako, T. Oku, and Masanori Murakami
-
Applied Physics A Materials Science & Processing 61 (1995) 331
- Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation
-
- S. Fujii, Y. Nishibayashi, S. Shikata, A. Uedono, and S. Tanigawa
-
Diamond and Related Materials 4 (1995) 661
- I/V characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate
-
- A Vescan
-
Journal of Applied Physics 78 (1995) 1510
- Study of various types of diamonds by measurements of double crystal x-ray diffraction and positron annihilation
-
- S. Fujii, Y. Nishibayashi, S. Shikata, A. Uedono, and S. Tanigawa
-
Journal of Applied Physics 77 (1995) 6332
- Investigation of the high-field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films
-
- E. Boettger, A. Bluhm, X. Jiang, L. Scha?fer, and C.-P. Klages
-
Applied Physics Letters 65 (1994) 430
- Characterization of rectifying contacts on natural type IIb diamond
-
- M. L. Hartsell, H. A. Wynands, and B. A. Fox
-
Diamond and Related Materials 3 (1994) 1389
- p-n Junction diode by B-doped diamond heteroepitaxially grown on Si-doped c-BN
-
- T. Tomikawa, Y. Nishibayashi, S. Shikata, and H. Sumiya
-
Japanese Journal of Applied Physics 33 (1994) L888
- Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing BaTiO3 Insulator Film
-
- Takuya Ariki, Shozo Shikama, Sei Suzuki, Yuzuru Otsuka, Tetsuro Maki and Takeshi Kobayashi
-
Journal of Applied Physics 76 (1994) 2293
- Formation of ohmic contacts to p-type diamond using carbide forming metals
-
- Jiro Nakanishi, A. Otsuki, T. Oku, O. Ishiwata, and Masanori Murakami
-
Journal of Applied Physics 75 (1994) 5165
- Dependence of contact resistance on metal electronegativity for B-doped diamond films
-
- Goro Kawaguchi, Jiro Nakanishi, A. Otsuki, T. Oku, and Masanori Murakami
-
Physical Review B 49 (1994) 13629
- Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfaces
-
- J. van der Weide and R. Nemanich
-
Applied Physics Letters 62 (1993) 582
- Homoepitaxial growth of diamond thin films by electron cyclotron-resonance microwave plasma chemical-vapor-deposition apparatus with CO/H2 gaseous source
-
- Masaaki Komori, Tetsuro Maki, Taigen Kim, Gen Liang Hou, Yoshiyuki Sakaguchi, Ken Sakuta, and Takeshi Kobayashi
-
Diamond and Related Materials 2 (1993) 1107
- Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure using polycrystalline diamond films
-
- K. Miyata, K. Kobashi, and D.L. Dreifus
-
Diamond and Related Materials 2 (1993) 37
- Titanium carbide rectifying contacts on boron-doped polycrystalline diamond
-
- T. Tachibana, J.T. Glass, and D.G. Thompson
-
Diamond and Related Materials 2 (1993) 963
- Correlation of interface chemistry to electrical properties of metal contacts on diamond
-
- T. Tachibana and J.T. Glass
-
Journal of Applied Physics 73 (1993) 4448
- Metal/intrinsic diamond/semiconducting diamond junction diodes fabricated from polycrystalline diamond films
-
- K. Miyata and D. L. Dreifus
-
Diamond and Related Materials 1 (1992) 665
- Diamond devices made of epitaxial diamond films
-
- Naoji Fujimori and Yoshiki Nishibayashi
-
Journal of Applied Physics 72 (1992) 4925
- Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes
-
- Sunwoo Lee, John Mazurowski, G. Ramseyer, and P. A. Dowben
-
Journal of Applied Physics 72 (1992) 5912
- Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond
-
- T. Tachibana and J. T. Glass
-
Physical Review B 45 (1992) 11968
- Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. I. Gold contacts: A non-carbide-forming metal
-
- T. Tachibana, B. Williams, and J. Glass