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Jpn. J. Appl. Phys. 29 (1990) pp. L2322-L2325  |Next Article|  |Table of Contents|
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Letter

A Model for SiN_x CVD Film Growth Mechanism by Using SiH₄ and NH₃ Source Gases

Akihiko Ishitani and Shiro Koseki¹

VLSI Development Division, NEC Corporation
¹NEC Scientific Information System Development, Ltd.

(Received August 30, 1990; accepted for publication October 20, 1990)

This paper theoretically explores the SiN_x CVD film growth mechanism by means of the ab initio molecular orbital method. In a chemical vapor deposition (CVD) reactor, an SiH₄ and NH₃ gas mixture produces silylenes (X-Si-Y: X and Y are substituents). The insertion of silylene into a surface Si-H or N-H bond is the important part of the CVD film growth mechanism. Following the insertion, H₂-elimination reaction occurs from the surface. The film growth mechanism explains Si-H and N-H bonds remaining ih an SiN_x film and the deviation from the stoichiometry. Based on the mechanism, it is suggested that a new source gas, SiNH₅, instead of SiH₄ deposits a stoichiometric SiN_x film, and that a transition layer exists between the native oxide and the bulk SiN_x film.

URL: http://jjap.jsap.jp/link?JJAP/29/L2322/
DOI: 10.1143/JJAP.29.L2322

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References | Citing Articles (4)

1. H. J. Stein: J. Appl. Phys. 57 (1985) 2040[AIP Scitation].
2. M. W. Schmidt, J. A. Boatz, K. K. Baldridge, S. Koseki, M. S. Gordon, S. T. Elbert and B. Lam: Quantum Chem. Program Exchange Bulletin 7 (1987) 115.
3. K. Ragharavachari, J. Chandrasekhr, M. S. Gordon and K. J. Dykema: J. Am. Chem. Soc. 106 (1984) 5853.
4. R. W. G. Wyckoff: Crystal Structures (John Wiley & Sons, New York, 1964) 2nd ed., Chap. VD, p. 158.
5. M. M. Julian and G. V. Gibbs: J. Phys. Chem. 89 (1985) 5476.
6. K. Ando, A. Ishitani and K. Hamano: to be published in Jpn. J. Appl. Phys. 29 (1990).

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