Jpn. J. Appl. Phys. 29 (1990) pp. L2357-L2359 |Next Article| |Table of Contents|
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Letter
Pd-Gate a-Si:H Thin-Film Transistors as Hydrogen Sensors
Luigi Mariucci,
Alessandro Pecora,
Carla Puglia,
Carlo Reita,
Giovanni Petrocco and
Guglielmo Fortunato
Istituto di Elettronica dello Stato Solido, CNR
(Received August 7, 1990; accepted for publication October 20, 1990)
Top-gate a-Si:H thin fihn transistors (TFTs), with Pd as a gate electrode and silicon nitride as a gate insulator, have been fabricated and successfully operated as hydrogen sensors. The sensitivity mechanism of such devices resides in the catalytic behavior of Pd towards H2-molecules and in the formation of a H-dipole at the Pd/gate insulator interface, which influences the threshold voltage of the transistor. The measured H-response is similar to that relative to a c-Si Pd-gate MOSFET. The obtained results show possible promising applications of the use of a-Si:H TFTs in the field of chemical sensors.
URL:
http://jjap.jsap.jp/link?JJAP/29/L2357/
DOI: 10.1143/JJAP.29.L2357
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