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Jpn. J. Appl. Phys. 29 (1990) pp. L4-L6  |Next Article|  |Table of Contents|
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Letter

Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs Substrates

Akihiro Yahata, Hiroshi Mitsuhashi, Keijiro Hirahara and Tatsuro Beppu

Research and Development Center, Toshiba Corporation

(Received October 14, 1989; accepted for publication December 6, 1989)

Hall effect measurements were carried out for Li-doped MOCVD ZnSe layers whose GaAs substrates were removed. This made it possible to obtain the original p-type properties for the layers. Hole concentration, Hall mobility and specific resistivity were 4.1×10¹⁶ cm^-3, 24 cm²/V ·s and 6.4 Ω·cm, respectively. Furthermore, the characteristics for the GaAs inversion layers, which were changed from semi-insulating to p-type by Zn diffusion from the ZnSe layers, were estimated by comparing the results of samples without GaAs substrates with those with GaAs substrates.

URL: http://jjap.jsap.jp/link?JJAP/29/L4/
DOI: 10.1143/JJAP.29.L4

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