Jpn. J. Appl. Phys. 29 (1990) pp. L470-L472 |Next Article| |Table of Contents|
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Letter
Contribution of the Si s Electronic State to the Density of State of CoSi2 at Fermi Energy by Soft X-Ray Emission Spectroscopy
Motohiro Iwami,
Hatsuo Nakamura1,
Masaaki Hirai,
Masahiko Kusaka,
Yuhko Azuma2 and
Fumio Akao3
Research Laboratory for Surface Science, Faculty of Science, Okayama University
1Osaka Electro-Communication University
2Matsushita Technoresearch Inc.
3Department of Electronic Engineering, Okayama University of Science
(Received January 16, 1990; accepted for publication February 8, 1990)
A clear modification is observed between an electron-excited Si L2.3 valence band (VB) soft X-ray emission spectrum (SXES) for CoSi2 and the one for Si. From this fact, it is concluded that a fair amount of the Si s electronic state is included in the upper half, especially at the Fermi edge, of the VB density of state (VB-DOS) of CoSi2. This fact is a clear contrast to many proposals given so far, where it is claimed that the upper part of the VB-DOS of CoSi2 is constructed only by the electronic states due to Co(3d)-Si(3p) hybridization.
URL:
http://jjap.jsap.jp/link?JJAP/29/L470/
DOI: 10.1143/JJAP.29.L470
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