Jpn. J. Appl. Phys. 30 (1991) pp. 3558-3561  |Next Article|  |Table of Contents|
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Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

Takashi Akahori, Akira Tanihara¹ and Masashi Tano¹

(Received September 6, 1991; accepted for publication November 16, 1991)

TiN film is used in the ultra large scale integrated circuit (ULSI) process as a diffusion barrier. Conventional TiN films are deposited by reactive sputtering or by rapid thermal nitridation (RTN) of sputtered titanium layers. Our research group has developed a new ECR (electron cyclotron resonance) plasma CVD (chemical vapor deposition) system capable of depositing metal films. By using this system, TiN films were prepared using TiCl₄ and N₂ as material gases. It is proven that the films have many advantages: low resistivity, low stress, high barrier property, thick deposition on the bottom of the high aspect ratio's hole and low chlorine concentration in comparison with LPCVD (low pressure chemical vapor deposition) TiN film.

URL: http://jjap.jsap.jp/link?JJAP/30/3558/
DOI: 10.1143/JJAP.30.3558
KEYWORDS:ECR, plasma, CVD, barrier metal, TiN

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