Jpn. J. Appl. Phys. 30 (1991) pp. 3558-3561  |Table of Contents|
|Abstract| |Full Text PDF (726K)| |Buy This Article|

Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

Takashi Akahori, Akira Tanihara and Masashi Tano

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Coordination Chemistry Reviews 257 (2013) 2073
    CVD and precursor chemistry of transition metal nitrides
    Andreas Kafizas, Claire J. Carmalt, and Ivan P. Parkin
  2. Japanese Journal of Applied Physics 39 (2000) 1299
    Properties of TiN Films on Heated Substrate Below 550°C by 50 Hz Plasma-Enhanced Chemical Vapor Deposition
    Masaki Yoshino, Mitsuo Shimozuma, Hiroyuki Date, Adolfo Rodrigo and Hiroaki Tagashira
  3. Thin Solid Films 357 (1999) 125
    Low temperature chemical vapor deposition of titanium nitride films from tetrakis(ethylmethylamido)titanium and ammonia
    Siddhartha Panda, Jungsook Kim, Bruce H. Weiller, Demetre J. Economou, and David M. Hoffman
  4. Journal of Applied Physics 84 (1998) 596
    Laser-assisted chemical vapor deposition of titanium nitride films
    Seiji Ishihara and Mitsugu Hanabusa
  5. Journal of Applied Physics 83 (1998) 5069
    Monte Carlo simulations of argon ion transport in the downstream region of electron cyclotron resonance plasmas
    X. X. Zhong, J. D. Wu, C. Z. Wu, and F. M. Li
  6. Applied Surface Science 120 (1997) 199
    Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy
    Mikko Ritala, Timo Asikainen, Markku Leskelä, Janne Jokinen, Reijo Lappalainen, Mikko Utriainen, Lauri Niinistö, and Eero Ristolainen
  7. Japanese Journal of Applied Physics 36 (1997) 5651
    Very High Frequency Plasma Enhanced Chemical Vapor Deposition of TiSix/TiN1-xSix Barrier Films
    Shigeru Mizuno, Manabu Tagami, Shinya Hasegawa and Youichirou Numasawa
  8. Plasma Chemistry and Plasma Processing 17 (1997) 181
    Optical emission spectroscopy as a real time diagnostic tool for plasma-assisted deposition of TiN
    Mohamed Boumerzoug, Marcel Boudreau, and Peter Mascher
  9. Thin Solid Films 305 (1997) 103
    Effects of deposition parameters on composition, structure, resistivity and step coverage of TiN thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Jong-Seok Kim, Eung-Jik Lee, Jong-Tae Baek, and Won-Jong Lee
  10. MRS Proceedings 427 (1996) 325
    Chemical Vapor Deposition of Tin for Ulsi Applications
    M. Eizenberg
  11. Thin Solid Films 281-282 (1996) 155
    Plasma-enhanced CVD of TiN and Ti using low-pressure and high-density helicon plasma
    Ryoki Tobe, Atsushi Sekiguchi, Masao Sasaki, Osamu Okada, and Naokichi Hosokawa
  12. Japanese Journal of Applied Physics 33 (1994) 413
    Ohmic Contact in Electron Cyclotron Resonance Chemical Vapor Deposition-TiN/Si Structure
    Yusuke Harada, Takashi Akahori and Hiroshi Onoda
  13. Japanese Journal of Applied Physics 33 (1994) 470
    Conformal Chemical Vapor Deposition TiN(111) Film Formation as an Underlayer of Al for Highly Reliable Interconnects
    Takeshi Kaizuka, Hiroshi Shinriki, Nobuyuki Takeyasu and Tomohiro Ohta
  14. Journal of Applied Physics 76 (1994) 4377
    Plasma enhanced chemical vapor deposition of titanium nitride thin films using cyclopentadienyl cycloheptatrienyl titanium
    R. M. Charatan, M. E. Gross, and D. J. Eaglesham
  15. Applied Physics Letters 63 (1993) 325
    Deposition of TiN using tetrakis(dimethylamido)-titanium in an electron-cyclotron-resonance plasma process
    A. Weber, R. Nikulski, and C.-P. Klages
  16. MRS Proceedings 334 (1993) 329
    Investigations of Tin and Ti Film Deposition by Plasma Activated Cvd Using Cyclopentadienyl Cycloheptatrienyl Titanium, a Low Oxidation State Precursor
    Robert M. Charatan, Mihal E. Gross, and David J. Eaglesham


[ARCHIVE] [SEARCH] [REGISTRATION] [JJAP HOME] [JSAP HOME]
Copyright ©2011 The Japan Society of Applied Physics
Contact information