Jpn. J. Appl. Phys. 30 (1991) pp. 3562-3666  |Next Article|  |Table of Contents|
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Single-Target Sputtring Process for Lead Zirconate Titanate Thin Films with Precise Composition Control

Kazuyoshi Torii, Toru Kaga, Keiko Kushida, Hiroshi Takeuchi and Eiji Takeda

(Received September 5, 1991; revised manuscript revised September 26, 1991; accepted for publication October 19, 1991)

The influence of growth conditions on rf-magnetron sputtered lead zirconate titanate (or PZT) thin films has been investigated, and the structural and electrical properties of PZT thin films have been examined. It was found that the Pb content in a sputtered film is proportional to rf power, thereby making it possible to control the film composition precisely. A well-crystallized perovskite structure was obtained by postdeposition annealing at 590°C. A stoichiometric film (i.e., Pb/Zr+Ti=1) had a dielectric constant value of 1180.

URL: http://jjap.jsap.jp/link?JJAP/30/3562/
DOI: 10.1143/JJAP.30.3562

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