Jpn. J. Appl. Phys. 30 (1991) pp. 3575-3579  |Next Article|  |Table of Contents|
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Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water

Satoru Watanabe, Mayumi Shigeno, Noriaki Nakayama and Takashi Ito

(Received September 6, 1991; accepted for publication October 19, 1991)

Aqueous HF etching of the silicon surface removes surface oxide, leaving a silicon surface terminated inhomogeneously by silicon mono-, di-, and trihydrides. We studied the effect of the immersion in water following the HF etching, on the surface hydride structure on Si(111), by measuring Si-H stretching vibration using infrared absorption spectroscopy. Immersion in boiling water (100°C) for 600 s produces a surface homogeneously terminated with silicon monohydride normal to the surface and free of oxidation. We concluded that water can remove silicon dihydride and trihydride and leave a silicon surface terminated with monohydride. The homogeneous surface has a low defect density of less than 0.5%.

URL: http://jjap.jsap.jp/link?JJAP/30/3575/
DOI: 10.1143/JJAP.30.3575

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