Jpn. J. Appl. Phys. 30 (1991) pp. 3627-3629 |Next Article| |Table of Contents|
|Full Text PDF (405K)| |Buy This Article|
BF2+ Ion Implantation into Very-Low-Temperature Si Wafer
Department of Electrical Engineering, Hiroshima University, 1-4 Kagamiyama, Higashi-Hiroshima 724
1Research Center for Integrated Systems, Hiroshima University, 1-4 Kagamiyama, Higashi-Hiroshima 724
(Received September 9, 1991; accepted for publication October 19, 1991)
BF2+ ions at 30 keV were implanted into silicon wafers held at -100°C or room temperature. The recrystallization process of the implanted wafers was examined by Rutherford backscattering (RBS) and Raman scattering. The value of χmin for wafers implanted at -100°C and annealed at 600°C is 0.05, close to that of crystalline Si, while it is 0.08 for the room-temperature implantation. The Raman spectrum for the case of low-temperature implantation also exhibits a smaller amount of residual defects than that for the room-temperature implantation.
- S. Ando, H. Horie, K. Oikawa, H. Kato, H. Ishiwaki and S. Hijiya: Proc. of 1990 Symp. on VLSI Technology, Honolulu (Business Center for Academic Societies, Japan, Tokyo, 1990) p. 65.
- M. Y. Tsai, D. S. Day and B. G. Streetman:
J. Appl. Phys. 50 (1979) 188[AIP Scitation].
- T. Suzuki, H. Yamaguchi, S. Ohzono and N. Natsuaki: Extended Abstracts of the 22nd (1990, Int.) Conf. on Solid State Devices and Materials Sendai (Business Center for Academic Societies, Japan, Tokyo, 1990) p. 1163.
- S. M. Sze: VLSI Technology (McGraw-Hill, 1988) 1st ed., p. 242.
- T. Kinoshita, M. Takakura, S. Miyazaki, S. Yokoyama, M. Koyanagi and M. Hirose:
Jpn J. Appl. Phys. 29 (1990) L2349[JSAP].
- S. D. Brotherton, J. P. Groers, N. D. Young, J. B. Clegg and J. R. Ayres:
J. Appl. Phys. 60 (1986) 3567[AIP Scitation].