Jpn. J. Appl. Phys. 30 (1991) pp. 3677-3684  |Next Article|  |Table of Contents|
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Analytical Device Model of SOI MOSFETs Including Self-Heating Effect

Naoki Yasuda, Shuichi Ueno, Kenji Taniguchi, Chihiro Hamaguchi, Yasuo Yamaguchi¹ and Tadashi Nishimura¹

(Received September 5, 1991; accepted for publication November 16, 1991)

A simple analytical model for device characteristics of silicon-on-insulator (SOI) MOSFETs is proposed. The effect of the self-heating is incorporated into a pseudo-2-dimensional drain-current model through an analytical expression using a thermal distribution-constant circuit. The device characteristics calculated with the model were found to agree well with experimental drain-current characteristics.

URL: http://jjap.jsap.jp/link?JJAP/30/3677/
DOI: 10.1143/JJAP.30.3677

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