Jpn. J. Appl. Phys. 30 (1991) pp. 3715-3718  |Table of Contents|
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A New Method to Estimate Grain Boundary Trap State Density in Poly-Si TFTs

Noriji Kato, So Yamada, Yoshio Nishihara, Mario Fuse and Toshihisa Hamano

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Journal of Applied Physics 78 (1995) 6122
    Two-dimensional simulation study of field-effect operation in undoped poly-Si thin-film transistors
    Hyang-Shik Kong and Choochon Lee
  2. Journal of Applied Physics 77 (1995) 2177
    Output characteristics of short-channel polycrystalline silicon thin-film transistors
    C. A. Dimitriadis and D. H. Tassis
  3. Electronics and Communications in Japan (Part II Electronics) 76 (1993) 48
    A new two-dimensional analysis method for polycrystalline-silicon tfts
    So Yamada, Noriji Kato, and Mitsumasa Koyanagi
  4. Journal of Applied Physics 74 (1993) 2919
    Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors
    C. A. Dimitriadis, D. H. Tassis, N. A. Economou, and A. J. Lowe


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