Jpn. J. Appl. Phys. 30 (1991) pp. 3733-3740 |Next Article| |Table of Contents|
|Full Text PDF (2158K)| |Buy This Article|
TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
SEIKO EPSON CORPORATION, TFT Research Laboratory, Owa 3-3-5, Suwa, Nagano 392
(Received September 18, 1991; accepted for publication November 16, 1991)
This paper investigates the role of silane partial pressure (PSiH4) in VLPCVD on the as-deposited poly-Si film quality. The film quality strongly depends on the PSiH4 when deposition temperature is kept constant. Higher pressure and excessively lower pressure have been found to be not adequate for thin film transistors (TFTs). By optimizing the deposition conditions, excellent TFTs can be fabricated through a low temperature process without relying on any other special processes. This paper also suggests the possibility of further improvement of as-deposited poly-Si films.
- D. B. Meakin, P. A. Coxon, P. Migliorato, J. Stoemenons and N. A. Economou:
Appl. Phys. Lett. 50 (1987) 1894[AIP Scitation].
- S. Morozumi, R. Araki, H. Ohshima, M. Matsuo, T. Nakazawa and T. Satoh: Proc. 6th Int. Display Research Conference. Tokyo, 1986 (The Society for Information Display, California, 1986) p. 196.
- H. Ohshima, T. Nakazawa, T. Shimobayashi, H. Ishiguro and S. Morozumi: 1988 SID Int. Symp. Digest of Technical Papers, California, 1988 (The Society for Information Display, California, 1988) p. 408.
- D. A. G. Bruggman: Ann. Phys. (Leipzig) 24 (1935) 636.
- P. Joubert, B. Loisel, Y. Chouan and L. Haji: J. Electrochem. Soc. 134 (1987) 2541.