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Jpn. J. Appl. Phys. 30 (1991) pp. 3777-3781  |Next Article|  |Table of Contents|
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Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure

Prakash A. Murawala2,1, Osamu Tsuji2, Shizuo Fujita1 and Shigeo Fujita1

1Department of Electrical Engineering, Kyoto University, Kyoto 606-01
2R & D Division, Samco International Inc., 33 Tanakamiya-cho, Takeda, Kyoto 612

(Received September 4, 1991; accepted for publication October 19, 1991)

We report the effect of annealing and sulfur (S) passivation of GaAs surface on the interface characteristics and interdiffusion problem in ZnSe/GaAs heterostructures whose ZnSe layers are grown by atomic layer epitaxy (ALE) and metalorganic molecular beam epitaxy (MOMBE). The photoluminescence (PL) intensity of self-activated centers created due to interdiffusion at 500°C in the conventionally grown sample is 3-14 times higher than that in the S-passivated sample. Secondary ion mass spectroscopy (SIMS) data suggest that after annealing, Ga and As concentration in the ZnSe epilayer is lower in S-passivated materials. These features suggest that heterostructures are thermally stable in S-passivated material. As a result of S-passivation, full width at half maximum (FWHM) values of X-ray rocking curves are greatly reduced and we could, without postgrowth annealing, achieve well-defined C-V characteristics of a metal/pseudoinsulating ZnSe/GaAs metal-insulator-semiconductor (MIS) diode. Sulfur passivation is an important tool for the fabrication of high-quality heterostructures of II-VI and III-V semiconductors.

URL: http://jjap.jsap.jp/link?JJAP/30/3777/
DOI: 10.1143/JJAP.30.3777


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