(Received September 4, 1991; accepted for publication October 19, 1991)
The accumulation-mode bipolar transistor is proposed and investigated for the first time. The transistor uses the two-dimensional hole gas (2DHG) as an ultrathin base layer, which is accumulated at the AlAs barrier-p- collector interface. The transistor shows the common-emitter current gain of ∼30. The theoretical results reveal that by adopting the p- collector rather than the n- collector, and with the higher impurity concentration, the carrier concentration of the 2DHG base, the turn-on emitter-base bias, and the punch-through base-collector bias are improved drastically.