Jpn. J. Appl. Phys. 30 (1991) pp. 3846-3849  |Next Article|  |Table of Contents|
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Accumulation-Mode GaAlAs/GaAs Bipolar Transistor

Kazuhiko Matsumoto, Masami Ishii, Hidehiro Morozumi, Seiji Imai, Kunuhiro Sakamoto, Yutaka Hayashi, William Liu¹, Damian Costa¹, Tony Ma¹, Allan Massengale¹ and James S. Harris¹

(Received September 4, 1991; accepted for publication October 19, 1991)

The accumulation-mode bipolar transistor is proposed and investigated for the first time. The transistor uses the two-dimensional hole gas (2DHG) as an ultrathin base layer, which is accumulated at the AlAs barrier-p^- collector interface. The transistor shows the common-emitter current gain of ∼30. The theoretical results reveal that by adopting the p^- collector rather than the n^- collector, and with the higher impurity concentration, the carrier concentration of the 2DHG base, the turn-on emitter-base bias, and the punch-through base-collector bias are improved drastically.

URL: http://jjap.jsap.jp/link?JJAP/30/3846/
DOI: 10.1143/JJAP.30.3846

References

1. K. Matsumoto, Y. Hayashi, N. Hashizume, T. Yao, M. Kato, T. Miyashita, N. Fukuhara, H. Hirashima and T. Kinosada: IEEE Electron Device Lett. 7 (1986) 627.