Jpn. J. Appl. Phys. 30 (1991) pp. 3865-3872  |Next Article|  |Table of Contents|
|Full Text PDF (1332K)| |Buy This Article|

600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)

Akihiko Kikuchi, Katsumi Kishino and Yawara Kaneko

(Received September 6, 1991; accepted for publication November 16, 1991)

The 600 nm-range GaInP/AlInP multi-quantum-well (MQW) lasers grown by gas-source molecular beam epitaxy were investigated. Nonradiative recombination at heterointerfaces was drastically reduced by use of superlattice cladding (SLC) layers and 15° misoriented substrates (from (100) toward the [011] direction), resulting in increments of PL peak intensities from active layers by factors of 20 and 2, respectively. In addition to these effects, we changed the well numbers optimizing at three. As a result, a very low threshold current density (J_th) of 2.0 kA/cm² was obtained at a lasing wavelength of 629nm, without strain effects. Finally, experimental rapid deterioration of J_th and characteristic temperatures by shortening of the wavelengths was explained by leakage current components over the heterobarrier.

URL: http://jjap.jsap.jp/link?JJAP/30/3865/
DOI: 10.1143/JJAP.30.3865
KEYWORDS:gas source molecular beam epitaxy, 630 nm semiconductor laser, AlGaInP, multi quantum well, superlattice clad, superlattice barrier, substrate misorientation effect, current leakage over heterobarrier, multi quantum barrier

References | Citing Articles (7)

1. I. Hino, A. Gomyo, K. Kobayashi, T. Suzuki and K. Nishida: Appl. Phys. Lett. 43 (1983) 987[AIP Scitation].
2. Y. Kawamura, H. Asahi, H. Nagai and T. Ikegami: Electron. Lett. 19 (1983) 163[AIP Scitation].
3. K. Kobayashi, S. Kawata, A. Gomyo, I. Hino and T. Suzuki: Electron. Lett. 21 (1985) 931[AIP Scitation].
4. M. Ikeda, Y. Mori, H. Sato, K. Kaneko and N. Watanabe: Appl. Phys. Lett. 47 (1985) 1027[AIP Scitation].
5. M. Ishikawa, Y. Ohba, H. Sugawara, M. Yamamoto and T. Nakanishi: Appl. Phys. Lett. 48 (1986) 207[AIP Scitation].
6. H. Tanaka, Y. Kawamura, S. Nojima, K. Wakita and H. Asahi: J. Appl. Phys. 61 (1987) 1713[AIP Scitation].
7. T. Hayakawa, K. Takahashi, M. Hosoda, S. Yamamoto and T. Hijikata: Jpn. J. Appl. Phys. 27 (1988) L1553[JSAP].
8. A. Kikuchi, K. Kishino and Y. Kaneko: J. Appl. Phys. 66 (1989) 4557[AIP Scitation].
9. A. Kikuchi, Y. Kaneko, I. Nomura and K. Kishino: Electron. Lett. 26 (1990) 1668[AIP Scitation].
10. T. Yokotsuka, A. Takamori and M. Nakajima: Appl. Phys. Lett. 58 (1991) 1521[AIP Scitation].
11. K. Kobayashi, I. Hino and T. Suzuki: Appl. Phys. Lett. 46 (1985) 7[AIP Scitation].
12. Y. Kaneko, A. Kikuchi, I. Nomura and K. Kishino: Electron. Lett. 26 (1990) 657[AIP Scitation].
13. M. Ikeda, A. Toda, K. Nakano, Y. Mori and N. Watanabe: Appl. Phys. Lett. 50 (1987) 1033[AIP Scitation].
14. S. Kawata, H. Fujii, K. Kobayashi, A. Gomyo, I. Hino and T. Suzuki: Electron. Lett. 23 (1987) 1327[AIP Scitation].
15. J. M. Dallesasse, D. W. Nam, D. G. Deppe and N. Holonyak, Jr.: Appl. Phys. Lett. 53 (1988) 1826[AIP Scitation].
16. M. Ishikawa, H. Siozawa, Y. Tsuburai and Y. Uematsu: Electron. Lett. 26 (1990) 211[AIP Scitation].
17. K. Kobayashi, Y. Ueno, H. Hotta, A. Gomyo, K. Tada, K. Hara and T. Yuasa: Jpn. J. Appl. Phys. 29 (1990) L1669[JSAP].
18. H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Matsukawa, K. Yodoshi and T. Yamaguchi: Electron. Lett. 27 (1991) 661[AIP Scitation].
19. D. F. Welch, T. Wang and D. R. Scifres: Electron. Lett. 27 (1991) 693[AIP Scitation].
20. A. Kikuchi, K. Kishino and Y. Kaneko: Electron. Lett. 27 (1991) 1301[AIP Scitation].
21. S. Minagawa, T. Tanaka and M. Kondow: Electron. Lett. 25 (1989) 925[AIP Scitation].
22. M. B. Panish: J. Cryst. Growth 81 (1987) 249.
23. J. S. Yuan, C. C. Hsu, R. M. Cohen and G. B. Stringfellow: J. Appl. Phys. 57 (1985) 1380[AIP Scitation].
24. H. Iwata, H. Yokoyama, M. Sugimoto and N. Hamao: Appl. Phys. Lett. 54 (1989) 2427[AIP Scitation].
25. C. T. H. F. Liedenbaum, A. Valster, A. L. G. J. Severens and G. W.'tHooft: Appl. Phys. Lett. 57 (1990) 2698[AIP Scitation].
26. J. C. Harmand, T. Matsuno and K. Inoue: Jpn. J. Appl. Phys. 29 (1990) L233[JSAP].
27. A. Kikuchi, Y. Kaneko, I. Nomura and K. Kishino: Proc. 1st Int. Conf. on Epitaxial Crystal Growth, Budapest, 1990 (Trans Tech Publications, Zurich, 1991).
28. M. Asada, A. Kameyama and Y. Suematsu: IEEE J. Quantum Electron. QE-20 (1984) 745.
29. T. H. Chong and K. Kishino: IEEE J. Quantum Electron. 27 (1991) 1501.
30. A. R. Goodwin, J. R. Peters, M. Pion, G. H. B. Thompson and J. E. A. Whiteaway: J. Appl. Phys. 46 (1975) 3126[AIP Scitation].
31. K. Kishino, A. Kikuchi, Y. Kaneko and I. Nomura: Appl. Phys. Lett. 58 (1991) 1822[AIP Scitation].
32. K. Iga, H. Uenohara and F. Koyama: Electron. Lett. 22 (1986) 1008[AIP Scitation].