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Jpn. J. Appl. Phys. 30 (1991) pp. 902-905  |Table of Contents|
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High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures

Tadashi Saku, Yoshiro Hirayama and Yoshiji Horikoshi

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Journal of Applied Physics 99 (2006) 023707
    Fabrication of induced two-dimensional hole systems on (311)A GaAs
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  2. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 24 (2006) 1863
    Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped AlxGa1−xAs
    D. Reuter, C. Riedesel, and A. D. Wieck
  3. Applied Physics Letters 85 (2004) 1190
    Influence of manganese contamination on high-mobility GaAs∕AlGaAs heterostructures
    K. Wagenhuber, H.-P. Tranitz, M. Reinwald, and W. Wegscheider
  4. Applied Physics Letters 82 (2003) 481
    Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs
    D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck
  5. Semiconductor Science and Technology 16 (2001) 603
    D Reuter, D Kähler, U Kunze, and A D Wieck
  6. Journal of Applied Physics 88 (2000) 321
    Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities
    D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck
  7. Japanese Journal of Applied Physics 38 (1999) 6197
    Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
    Keita Suzuki, Masahiro Ito and Yoshiji Horikoshi
  8. Applied Physics Letters 71 (1997) 683
    Extremely high-mobility two dimensional electron gas: Evaluation of scattering mechanisms
    V. Umansky, R. de-Picciotto, and M. Heiblum
  9. Japanese Journal of Applied Physics 36 (1997) 926
    Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
    Kyoichi Suzuki, Ken Saito, Tadashi Saku and Yoshiro Hirayama
  10. Solid-State Electronics 41 (1997) 1535
    High density and high mobility transport characteristics in gated undoped GaAsAl/xGa1−xAs heterostructures
    J. Herfort and Y. Hirayama
  11. Japanese Journal of Applied Physics 35 (1996) 34
    Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
    Tadashi Saku, Yoshiji Horikoshi and Yasuhiro Tokura
  12. Physical Review B 54 (1996) 1947
    Noninvasive determination of the ballistic-electron current distribution
    Y. Tokura, T. Honda, K. Tsubaki, and S. Tarucha
  13. Physical Review B 53 (1996) 16403
    Quasi-one-dimensional transport near the ballistic limit
    Y. Tokura and S. Tarucha
  14. Physical Review B 53 (1996) R10528
    Electron scattering by steps in a vicinal heterointerface
    Y. Tokura, T. Saku, and Y. Horikoshi
  15. Physical Review B 53 (1996) 9907
    Formation of GaAs/AlAs(001) interfaces studied by scanning tunneling microscopy
    J. Behrend, M. Wassermeier, W. Braun, P. Krispin, and K. Ploog
  16. Applied Physics A Materials Science & Processing 60 (1995) 441
    In-situ monitoring of interface formation using the phase shift of reflection high-energy electron diffraction intensity oscillations
    W. Braun and K. Ploog
  17. Physical Review B 52 (1995) 11248
    Two-dimensional electron-gas mobility in GaAs/AlxGa1-xAs: Deformation-potential study including hydrostatic-pressure effects
    I. Gorczyca and J. Krupski
  18. Semiconductor Science and Technology 10 (1995) 1237
    M Kawashima, T Saku, and Y Horikoshi
  19. Solid State Communications 94 (1995) 413
    Reduction of quantized conductance at low temperatures observed in 2 to 10 μm-long quantum wires
    Seigo Tarucha, Takashi Honda, and Tadashi Saku
  20. Japanese Journal of Applied Physics 33 (1994) L830
    Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
    Mineo Washima, Tomoyoshi Mishima and Makoto Kudo
  21. Japanese Journal of Applied Physics 33 (1994) 4837
    High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
    Tadashi Saku, Yoshiji Horikoshi and Seigo Tarucha
  22. Journal of Applied Physics 75 (1994) 1993
    In situ technique for measuring Ga segregation and interface roughness at GaAs/AlGaAs interfaces
    W. Braun and K. H. Ploog
  23. Physical Review B 50 (1994) 7615
    Numerical analysis of electron-wave detection by a wedge-shaped point contact
    T. Usuki, M. Takatsu, R. Kiehl, and N. Yokoyama
  24. Applied Physics Letters 63 (1993) 51
    Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation
    Toshimasa Fujisawa, Tadashi Saku, Yoshiro Hirayama, and Seigo Tarucha
  25. Japanese Journal of Applied Physics 32 (1993) L648
    High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
    Toshiki Makimoto and Naoki Kobayashi
  26. Physical Review B 47 (1993) 4064
    Sharvin resistance and its breakdown observed in long ballistic channels
    S. Tarucha, T. Saku, Y. Tokura, and Y. Hirayama
  27. Semiconductor Science and Technology 8 (1993) 1032
    Migration-enhanced epitaxy of GaAs and AlGaAs
    Y Horikoshi
  28. Thin Solid Films 231 (1993) 74
    Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases
    Michael R. Melloch
  29. Applied Physics Letters 61 (1992) 2926
    Low-frequency noise in very high mobility modulation-doped structures
    J. R. Phillips, K. Tsubaki, T. Saku, and S. Tarucha
  30. Applied Physics Letters 60 (1992) 106
    Reflection and refraction of ballistic electrons through different carrier concentration regions
    Yoshino K. Fukai, Seigo Tarucha, Yoshiro Hirayama, Yasuhiro Tokura, and Tadashi Saku
  31. Physical Review B 46 (1992) 15558
    Anisotropic roughness scattering at a heterostructure interface
    Y. Tokura, T. Saku, S. Tarucha, and Y. Horikoshi
  32. Physical Review B 45 (1992) 13465
    Bend-resistance characteristics of macroscopic four-terminal devices with a high electron mobility
    S. Tarucha, T. Saku, Y. Hirayama, and Y. Horikoshi
  33. Physical Review B 45 (1992) 6010
    Optical dephasing of light-hole excitons in GaAs single quantum wells
    A. Honold, T. Saku, Y. Horikoshi, and K. Köhler
  34. Progress in Crystal Growth and Characterization of Materials 23 (1992) 73
    Epitaxial growth of III–V compound semiconductor thin films and their device applications
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  35. Surface Science 263 (1992) 253
    Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection
    Seigo Tarucha, Yoshino K. Fukai, Yoshiro Hirayama, and Tadashi Saku
  36. Physical Review B 44 (1991) 3440
    Hall effect in macroscopic ballistic four-terminal square structures
    Y. Hirayama, S. Tarucha, T. Saku, and Y. Horikoshi

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