Jpn. J. Appl. Phys. 30 (1991) pp. L1620-L1623 |Next Article| |Table of Contents|
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Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
Hiroyuki Okuyama,
Kazushi Nakano,
Takao Miyajima and
Katsuhiro Akimoto
Sony Corporation Research Center, Fujitsuka 174, Hodogaya, Yokohama 240
(Received June 25, 1991; accepted for publication July 20, 1991)
We propose a new material, ZnMgSSe, as the cladding layer of a blue-light laser diode. Band-gap energy can be varied from 2.8 to near 4 eV, maintaining lattice-matching to a (100)GaAs substrate. The band-gap energies of MgS and MgSe (zincblende structure) are estimated to be about 4.5 eV and 3.6 eV, and the lattice constants are 5.62 Å and 5.89 Å, respectively. The refractive index of ZnMgSSe lattice-matched to GaAs is smaller than that of ZnSSe lattice-matched to GaAs. ZnMgSSe meets the requirements of the cladding layer of ZnSSe for fabricating the blue-light laser diode.
URL:
http://jjap.jsap.jp/link?JJAP/30/L1620/
DOI: 10.1143/JJAP.30.L1620
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