Jpn. J. Appl. Phys. 30 (1991) pp. L322-L325  |Next Article|  |Table of Contents|
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Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors

Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi, Hirohiko Sugahara1 and Masaharu Oshima1

Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305
1NTT Applied Electronics Laboratories, Musashino, Tokyo 180

(Received November 17, 1990; accepted for publication January 19, 1991)

The effectiveness of (NH4)2Sx treatment on the (100) surface of GaP, (Al, Ga)As, InP and InAs was studied in comparison to that on GaAs by means of Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED). It was concluded that the existence of sulfur atoms bonded to semiconductors prevents the adsorption of oxygen. This phenomenon brings about the metal-dependent Schottky barrier fabricated on the (NH4)2Sx-treated surfaces, implying the reduction in the interface state density. The structure and effect of the (NH4)2Sx-treated surface of III-V compounds are qualitatively the same.

URL: http://jjap.jsap.jp/link?JJAP/30/L322/
DOI: 10.1143/JJAP.30.L322
KEYWORDS:(NH4)2Sx treatment, III-V compound semiconductors, Schottky barrier height, surface structure analysis


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