Jpn. J. Appl. Phys. 30 (1991) pp. L590-L592  |Next Article|  |Table of Contents|
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Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation

Kazuhiko Itaya, Masayuki Ishikawa, Koichi Nitta, Masaki Okajima and Gen-ichi Hatakoshi

(Received December 5, 1990; accepted for publication January 31, 1991)

The aging characteristics of transverse-mode stabilized InGaAlP laser diodes at high-power operation above 10 mW have been investigated. A rapid degradation mode related to the inner optical density of the laser was observed. This degradation mode could be effectively suppressed by reducing the inner optical density, adopting an asymmetric facet coating, and with a thinner active layer. Highly reliable operation at a high-power level above 10 mW for more than 1000 hours has been realized.

URL: http://jjap.jsap.jp/link?JJAP/30/L590/
DOI: 10.1143/JJAP.30.L590

References | Citing Articles (5)

1. M. Ishikawa, Y. Ohba, H. Sugawara, M. Yamamoto and T. Nakanisi: Appl. Phys. Lett. 48 (1986) 207[AIP Scitation].
2. K. Kobayashi, S. Kawata, A. Gomyo, I. Hino and T. Suzuki: Electron. Lett. 21 (1985) 931[AIP Scitation].
3. M. Ikeda, K. Nakano, Y. Mori, K. Kaneko and N. Watanabe: Appl. Phys. Lett. 48 (1986) 89[AIP Scitation].
4. A. Gomyo, K. Kobayashi, S. Kawata, I. Hino and T. Suzuki: Electron. Lett. 23 (1987) 85[AIP Scitation].
5. M. Ikeda, H. Sato, T. Ohta, K. Nakano, A. Toda, O. Kumagai and C. Kojima: Appl. Phys. Lett. 51 (1987) 1572[AIP Scitation].
6. K. Itaya, M. Ishikawa, H. Okuda, Y. Watanabe, K. Nitta, H. Shiozawa and Y. Uematsu: Appl. Phys. Lett. 53 (1988) 1363[AIP Scitation].
7. M. Ishikawa, H. Okuda, K. Itaya, H. Shiozawa and Y. Uematsu: Jpn. J. Appl. Phys. 28 (1989) 1615[JSAP].
8. K. Itaya, M. Ishikawa, Y. Watanabe, K. Nitta, G. Hatakoshi and Y. Uematsu: Jpn. J. Appl. Phys. 27 (1988) L2414[JSAP].
9. M. Ishikawa, K. Itaya, Y. Watanabe, G. Hatakoshi, H. Sugawara, Y. Ohba and Y. Uematsu: Extended Abstracts 19th Conf. Solid State Devices & Materials, Tokyo 1987 (The Japan Society of Applied Physics, Tokyo, 1987) p. 115.
10. H. Fujii, K. Kobayashi, S. Kawata, A. Gomyo, I. Hino, H. Hotta and T. Suzuki: Electron. Lett. 23 (1987) 938[AIP Scitation].
11. K. Itaya, Y. Watanabe, M. Ishikawa, G. Hatakoshi and Y. Uematsu: Appl. Phys. Lett. 56 (1990) 1718[AIP Scitation].
12. M. Ishikawa, Y. Ohba, Y. Watanabe and G. Hatakoshi: Extended Abstracts 18th Conf. Solid State Devices & Materials, Tokyo, 1986 (The Japan Society of Applied Physics, Tokyo, 1986) p. 153.