Jpn. J. Appl. Phys. 30 (1991) pp. L786-L789  |Table of Contents|
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Surface Structure of InAs (001) Treated with (NH4)2Sx Solution

Mitsuhiro Katayama, Masakazu Aono, Haruhiro Oigawa, Yasuo Nannichi, Hirohiko Sugahara and Masaharu Oshima

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  2. Chinese Physics Letters 28 (2011) 086802
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  3. Applied Physics Letters 95 (2009) 192111
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  5. Surface and Interface Analysis 37 (2005) 989
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    D. Y. Petrovykh, J. M. Sullivan, and L. J. Whitman
  6. Surface Science 523 (2003) 179
    Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs() surfaces
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  7. Surface Science 523 (2003) 231
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    D.Y. Petrovykh, M.J. Yang, and L.J. Whitman
  8. Applied Physics Letters 80 (2002) 3766
    Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics
    P. Grabs, G. Richter, R. Fiederling, C. R. Becker, W. Ossau, G. Schmidt, L. W. Molenkamp, W. Weigand, E. Umbach, and I. V. Sedova
  9. Physical Review B 61 (2000) 12982
    Structure of an InAs(111)A-(2×2)S surface studied by scanning tunneling microscopy, photoelectron spectroscopy, and x-ray photoelectron diffraction
    S. Ichikawa, N Sanada, S. Mochizuki, Y. Esaki, Y. Fukuda, M. Shimomura, T. Abukawa, and S. Kono
  10. Journal of Applied Physics 84 (1998) 3658
    Surface structures and electronic states of clean and (NH4)2Sx-treated InAs(111)A and (111)B
    S. Ichikawa, N. Sanada, N. Utsumi, and Y. Fukuda
  11. Physical Review B 56 (1997) 1084
    (NH4)2Sx-treated InAs(001) surface studied by x-ray photoelectron spectroscopy and low-energy electron diffraction
    Y. Suzuki, N. Sanada, M. Shimomura, S. Masuda, and Y. Fukuda
  12. Semiconductor Science and Technology 10 (1995) 95
    J L Leclercq, E Bergignat, and G Hollinger
  13. Surface Science 324 (1995) 159
    Absolute coverage measurements on sulphur-passivated GaAs(100)
    H. Xia, W.N. Lennard, G.R. Massoumi, J.J.J. van Eck, L.J. Huang, W.M. Lau, and D. Landheer
  14. Japanese Journal of Applied Physics 33 (1994) L279
    Scanning Tunneling Microscopy of (NH4)2Sx-Treated GaAs Surfaces Annealed in Vacuum
    Masafumi Tanimoto, Haruki Yokoyama, Masanori Shinohara and Naohisa Inoue
  15. Applied Physics Letters 61 (1992) 1835
    Optical study of surface dimers on sulfur-passivated (001)GaAs
    V. L. Berkovits and D. Paget
  16. Applied Physics Letters 60 (1992) 2669
    S-passivated InP (100)-(1×1) surface prepared by a wet chemical process
    Y. Tao, A. Yelon, E. Sacher, Z. H. Lu, and M. J. Graham
  17. Applied Physics Letters 59 (1991) 3577
    Initial stage of InAs on GaAs grown by molecular-beam epitaxy studied with low-energy ion scattering
    Minoru Kubo and Tadashi Narusawa


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