Jpn. J. Appl. Phys. 31 (1992) pp. 1258-1266  |Next Article|  |Table of Contents|
|Full Text PDF (1711K)| |Buy This Article|

Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh and Takashi Mukai

(Received January 13, 1992; accepted for publication February 15, 1992)

Low-resistivity p-type GaN films, which were obtained by N₂-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1×10⁶ Ω·cm after NH₃-ambient thermal annealing at temperatures above 600°C. In the case of N₂-ambient thermal annealing at temperatures between room temperature and 1000°C, the low-resistivity p-type GaN films showed no change in resistivity, which was almost constant between 2 Ω·cm and 8 Ω·cm. These results indicate that atomic hydrogen produced by NH₃ dissociation at temperatures above 400°C is related to the hole compensation mechanism. A hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed. The formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.

URL: http://jjap.jsap.jp/link?JJAP/31/1258/
DOI: 10.1143/JJAP.31.1258

References | Citing Articles (367)

1. S. Yoshida, S. Misawa and S. Gonda: Appl. Phys. Lett. 42 (1983) 427[AIP Scitation].
2. S. Yoshida, S. Misawa and S. Gonda: J. Vac. Sci. & Technol. B 1 (1983) 250[AIP Scitation].
3. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353[AIP Scitation].
4. H. Amano, I. Akasaki, K. Hiramatsu and N. Koide: Thin Solid Films 163 (1988) 415[CrossRef].
5. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki: J. Cryst. Growth 98 (1989) 209[CrossRef].
6. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Inst. Phys. Conf. Ser. 106 (1989) 725.
7. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112[JSAP].
8. H. Amano and I. Akasaki: Oyo Buturi 60 (1991) 163 [in Japanese].
9. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) L1705[JSAP].
10. S. Nakamura, M. Senoh and T. Mukai: Jpn. J. Appl. Phys. 30 (1991) L1708[JSAP].
11. S. Nakamura, T. Mukai and M. Senoh: Jpn. J. Appl. Phys. 30 (1991) L1998[JSAP].
12. S. Nakamura, T. Mukai, M. Senoh and N. Iwasa: Jpn. J. Appl. Phys. 31 (1992) L139[JSAP].
13. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) 1620[JSAP].
14. S. Nakamura, Y. Harada and M. Senoh: Appl. Phys. Lett. 58 (1991) 2021[AIP Scitation].
15. Z. J. Yu, J. H. Edgar, A. U. Ahmed and A. Rys: J. Electrochem. Soc. 138 (1991) 196.
16. F. Bozso and P. Avouris: Phys. Rev. B 38 (1988) 3937[APS].
17. S. J. Pearton, J. W. Corbett and T. S. Shi: Appl. Phys. A 43 (1987) 153[CrossRef].
18. N. M. Johnson, R. D. Burnham, R. A. Street and R. L. Thornton: Phys. Rev. B 33 (1986) 1102[APS].
19. P. S. Nandhra, R. C. Newman, R. Murray, B. Pajot, J. Chevallier, R. B. Beall and J. J. Harris: Semicond. Sci. Technol. 3 (1988) 356[IoP STACKS].
20. J. Chevallier, A. Jalil, B. Theys, J. C. Pesant, M. Aucouturier, B. Rose, C. Kazmierski and A. Mircea: Mater. Sci. Forum 38 (1989) 991.
21. A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, P. Allegri, V. Avanzini and C. Ghezzi: Mater. Sci. Forum 38 (1989) 1027.
22. E. M. Omeljanovsky, A. V. Pakhomov and A. Y. Polyakov: Mater. Sci. Forum 38 (1989) 1063.
23. C. T. Sah, J. Y. C. Sun and J. J. T. Tzou: Appl. Phys. Lett. 43 (1983) 204[AIP Scitation].
24. N. M. Johnson, C. Herring and D. J. Chadi: Phys. Rev. Lett. 56 (1986) 769[APS].
25. P. J. H. Denteneer, C. G. Van de Walle, Y. Bar-Yam and S. T. Pantelides: Mater. Sci. Forum 38 (1989) 979.
26. S. J. Pearton, W. C. Dautremont-Smith, J. Chevallier, C. W. Tu and K. D. Cummings: J. Appl. Phys. 59 (1986) 2821[AIP Scitation].
27. M. R. Lorenz and B. B. Binkowsky: J. Electrochem. Soc. 109 (1962) 24.
28. H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda and Y. Ishii: J. Lumin. 40 (1988) 121.
29. F. Bozso and P. Avouris: Phys. Rev. B 38 (1988) 3943[APS].