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Jpn. J. Appl. Phys. 31 (1992) pp. 1258-1266  |Table of Contents|
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Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh and Takashi Mukai

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    Raouf Z. Bakhtizin, Qi-Zhen -Zh. Xue, Qi-Kun -K. Xue, Ke-Hui -H. Wu, and Toshio Sakurai
  112. Applied Physics Letters 83 (2003) 1569
    Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy
    Ikuo Suemune, Jun-ichi Kato, Satoru Tanaka, and Satoshi Yamada
  113. Applied Physics Letters 83 (2003) 3293
    Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
    O. Gelhausen, H. N. Klein, M. R. Phillips, and E. M. Goldys
  114. Applied Physics Letters 83 (2003) 63
    Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
    Kyoung-Kook Kim, Hyun-Sik Kim, Dae-Kue Hwang, Jae-Hong Lim, and Seong-Ju Park
  115. IEEE Electron Device Letters 24 (2003) 156
    High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer
    Chia-Ming Lee, C. Chuo, I-Ling Chen, Jui-Cheng Chang, and Jen-Inn Chyi
  116. IEEE Journal of Selected Topics in Quantum Electronics 9 (2003) 1252
    Recent progress in high-power blue-violet lasers
    S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, Shu Goto, T. Tojyo, and M. Ikeda
  117. IEEE Transactions on Electron Devices 50 (2003) 292
    The origins of leaky characteristics of schottky diodes on p-GaN
    L.S. Yu, L. Jia, D. Qiao, S.S. Lau, J. Li, J.Y. Lin, and H.X. Jiang
  118. Japanese Journal of Applied Physics 42 (2003) 6405
    Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
    Yasuhito Zohta, Tomotsugu Mitani and Takashi Mukai
  119. Journal of Applied Physics 94 (2003) 2311
    Hydrogen configurations, formation energies, and migration barriers in GaN
    A. F. Wright, C. H. Seager, S. M. Myers, D. D. Koleske, and A. A. Allerman
  120. Journal of Applied Physics 94 (2003) 519
    Molecular nitrogen (N2[sup −]) acceptors and isolated nitrogen (N[sup −]) acceptors in ZnO crystals
    N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, G. Cantwell, and D. B. Eason
  121. Journal of Applied Physics 94 (2003) 4918
    Configurations, energies, and thermodynamics of the neutral MgH complex in GaN
    A. F. Wright and S. M. Myers
  122. Journal of Physics D Applied Physics 36 (2003) 2976
    A method to improve the light emission efficiency of Mg-doped GaN
    O Gelhausen, M R Phillips, and E M Goldys
  123. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 21 (2003) 134
    Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal–organic chemical-vapor deposition
    Keunjoo Kim and Joseph G. Harrison
  124. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 21 (2003) 838
    Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
    B. Z. Qu, Q. S. Zhu, X. H. Sun, S. K. Wan, Z. G. Wang, H. Nagai, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki
  125. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 21 (2003) 641
    Effects of KrF (248 nm) excimer laser irradiation on electrical and optical properties of GaN:Mg
    Dong-Joon Kim, Hyun-Min Kim, Myung-Geun Han, Yong-Tae Moon, Seonghoon Lee, and Seong-Ju Park
  126. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 21 (2003) 1501
    Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments
    C. C. Lee, C. P. Lee, M. H. Yeh, W. I. Lee, and C. T. Kuo
  127. MRS Proceedings 798 (2003) Y5.16
    Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition
    Y. Gong, Y. Gu, Igor L. Kuskovsky, G. F. Neumark, J. Li, J. Y. Lin, H. X. Jiang, and I. Ferguson
  128. MRS Proceedings 798 (2003) Y5.18
    Surface Potential Measurements of doping and defects in p-GaN
    M. Losurdo, M. M. Giangregorio, G. Bruno, A. S. Brown, W. A. Doolittle, Gon Namkoong, and A. J. Ptak
  129. MRS Proceedings 798 (2003) Y5.20
    Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN
    O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. Hoffmann
  130. Physica B Condensed Matter 340-342 (2003) 1
    Understanding defects in semiconductors as key to advancing device technology
    Eicke R Weber
  131. Physical Review B 68 (2003) 075206
    Identification of hydrogen configurations in p-type GaN through first-principles calculations of vibrational frequencies
    Sukit Limpijumnong, John Northrup, and Chris Van de Walle
  132. Physical Review B 68 (2003) 045205
    Blue emission band in compensated GaN:Mg codoped with Si
    B. Han, J. Gregie, and B. Wessels
  133. Physical Review Letters 90 (2003) 137402
    Vacancy Defects as Compensating Centers in Mg-Doped GaN
    M. Alatalo, K. Saarinen, L. Liszkay, D. Seghier, H. Gislason, S. Hautakangas, and J. Oila
  134. physica status solidi (c) 0 (2003) 1783
    Local vibrational modes and compensation effects in Mg-doped GaN
    A. Hoffmann, A. Kaschner, and C. Thomsen
  135. physica status solidi (c) 0 (2003) 1583
    Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon
    A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, and A. Krtschil
  136. Applied Physics Letters 81 (2002) 3747
    Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN
    O. Gelhausen, H. N. Klein, M. R. Phillips, and E. M. Goldys
  137. Applied Physics Letters 80 (2002) 1001
    Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition
    M. G. Cheong, K. S. Kim, C. S. Kim, R. J. Choi, H. S. Yoon, N. W. Namgung, E.-K. Suh, and H. J. Lee
  138. Applied Physics Letters 80 (2002) 1767
    Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films
    Keunjoo Kim and Sang Jo Chung
  139. IEEE Electron Device Letters 23 (2002) 240
    InGaN/GaN light emitting diodes activated in O/sub 2/ ambient
    C.H. Kuo, S.J. Chang, Y.K. Su, J.F. Chen, L.W. Wu, J.K. Sheu, C.H. Chen, and G.C. Chi
  140. IEEE Journal of Selected Topics in Quantum Electronics 8 (2002) 264
    Recent progress in group-III nitride light-emitting diodes
    T. Mukai
  141. IEEE Journal of Selected Topics in Quantum Electronics 8 (2002) 271
    Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications
    M. Koike, N. Shibata, H. Kato, and Y. Takahashi
  142. Japanese Journal of Applied Physics 41 (2002) L112
    Low Temperature Activation of Mg-Doped GaN in O2 Ambient
    Cheng Huang Kuo, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jinn Kong Sheu, Chin Hsiang Chen and Gou Chung Chi
  143. Japanese Journal of Applied Physics 41 (2002) 5909
    Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
    Jie Bai, Tao Wang, Yuhuai Liu, Yoshiki Naoi, Hongdong Li and Shiro Sakai
  144. Journal of Alloys and Compounds 330-332 (2002) 348
    Modification of electrical and optical properties of metal nitride thin films by hydrogen inclusion
    Y Hayashi, T Ishikawa, and D Shimokawa
  145. Journal of Applied Physics 92 (2002) 4129
    Rapid thermal annealing effects on blue luminescence of As-implanted GaN
    H. Y. Huang, J. Q. Xiao, C. S. Ku, H. M. Chung, W. K. Chen, W. H. Chen, M. C. Lee, and H. Y. Lee
  146. Journal of Applied Physics 91 (2002) 9711
    Two different behavior patterns of photoluminescence depending on Mg doping rate in p-type GaN epilayers
    S. M. Jeong, H. W. Shim, H. S. Yoon, M. G. Cheong, R. J. Choi, E.-K. Suh, and H. J. Lee
  147. Journal of Applied Physics 91 (2002) 732
    Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
    P. J. Hartlieb, A. Roskowski, R. F. Davis, W. Platow, and R. J. Nemanich
  148. Journal of Applied Physics 91 (2002) 6266
    Effects of nitrogen on GaAsP light-emitting diodes
    Tadashige Sato and Megumi Imai
  149. Journal of Electronic Materials 31 (2002) 391
    Transmission electron microscopy characterization of GaN nanowires
    Z. Liliental-Weber, Y. H. Gao, and Y. Bando
  150. Journal of Materials Research 17 (2002) 1019
    Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers
    S.J. Yang, T.W. Kang, T.W. Kim, and K.S. Chung
  151. Journal of Materials Research 17 (2002) 2007
    Dislocations around precipitates in AlGaN epilayers
    Junyong Kang, Shin Tsunekawa, and Atsuo Kasuya
  152. Journal of Physics Condensed Matter 14 (2002) R967
    Properties of GaN and related compounds studied by means of Raman scattering
    Hiroshi Harima
  153. MATERIALS TRANSACTIONS 43 (2002) 1138
    Hydrogen Absorbing Material. Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films.
    Tsutomu Ishikawa, Masataka Masuda, and Yasunori Hayashi
  154. MRS Proceedings 744 (2002) M10.7
    Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN
    O. Gelhausen, M. R. Phillips, H. N. Klein, and E. M. Goldys
  155. Materials Science and Engineering B 93 (2002) 6
    Electron traps created in n-type GaN during 25 keV hydrogen implantation
    F.D Auret, W.E Meyer, S.A Goodman, M Hayes, M.J Legodi, B Beaumont, and P Gibart
  156. Materials Science and Engineering B 93 (2002) 135
    Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth
    Suzuka Nishimura, Hidetoshi Hanamoto, Kazutaka Terashima, and Satoru Matsumoto
  157. Materials Science and Engineering B 91-92 (2002) 303
    Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
    Junyong Kang, Yaowen Shen, and Zhanguo Wang
  158. Materials Science and Engineering B 91-92 (2002) 313
    Precipitates in AlGaN epilayers grown by metallorganic vapor phase epitaxy
    Junyong Kang, Shin Tsunekawa, and Shun Ito
  159. Materials Science and Engineering B 90 (2002) 269
    Elastic, structural, bonding, and defect properties of zinc-blende BN, AlN, GaN, InN and their alloys
    D.N Talwar, D Sofranko, C Mooney, and S Tallo
  160. Physical Review B 66 (2002) 045204
    Theory of intrinsic and H-passivated screw dislocations in GaN
    John Northrup
  161. Physical Review B 65 (2002) 115207
    Theory of hydrogen in diamond
    J. Goss, R. Jones, M. Heggie, C. Ewels, P. Briddon, and S. Öberg
  162. Proceedings of the IEEE 90 (2002) 1015
    Impact of low-temperature buffer layers on nitride-based optoelectronics
    H. Amano, S. Kamiyama, and I. Akasaki
  163. physica status solidi (a) 194 (2002) 361
    GaN-Based Devices on Si
    A. Krost and A. Dadgar
  164. physica status solidi (a) 190 (2002) 33
    Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE
    A. Yoshikawa, K. Xu, Y. Taniyasu, and K. Takahashi
  165. Applied Physics Letters 79 (2001) 1834
    Fermi level dependence of hydrogen diffusivity in GaN
    A. Y. Polyakov, N. B. Smirnov, S. J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V. A. Dmitriev, A. E. Nikolaev, and A. S. Usikov
  166. Applied Physics Letters 79 (2001) 3636
    Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices
    A. P. Zhang, B. Luo, J. W. Johnson, F. Ren, J. Han, and S. J. Pearton
  167. Applied Physics Letters 78 (2001) 222
    Electrical properties of p-type GaN:Mg codoped with oxygen
    R. Y. Korotkov, J. M. Gregie, and B. W. Wessels
  168. Applied Physics Letters 78 (2001) 312
    Acceptor activation of Mg-doped GaN by microwave treatment
    Shoou-Jinn Chang, Yan-Kuin Su, Tzong-Liang Tsai, Chung-Ying Chang, Chih-Lih Chiang, Chih-Sung Chang, Tzer-Peng Chen, and Kuo-Hsin Huang
  169. Applied Physics Letters 78 (2001) 58
    Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing
    S. Guha, R. C. Keller, V. Yang, F. Shahedipour, and B. W. Wessels
  170. IEEE Transactions on Electron Devices 48 (2001) 552
    Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
    S. Keller, Yi-Feng Wu, G. Parish, Naiqian Ziang, J.J. Xu, B.P. Keller, S.P. DenBaars, and U.K. Mishra
  171. Japanese Journal of Applied Physics 40 (2001) 2143
    Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
    Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, Chih-Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma, Chang-Cheng Chou, Chia-Ming Lee and Jen-Inn Chyi
  172. Japanese Journal of Applied Physics 40 (2001) L423
    Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium
    Yasuhito Zohta, Yoshitaka Iwasaki, Shuji Nakamura and Takashi Mukai
  173. Japanese Journal of Applied Physics 40 (2001) L495
    Activation of p-Type GaN in a Pure Oxygen Ambient
    Tzu-Chi Wen, Shih-Chang Lee, Wei-I Lee, Tsung-Yu Chen, Shin-Hsiung Chan and Jian-Shihn Tsang
  174. Journal of Applied Physics 90 (2001) 108
    Lattice location of hydrogen in Mg doped GaN
    W. R. Wampler, S. M. Myers, A. F. Wright, J. C. Barbour, C. H. Seager, and J. Han
  175. Journal of Applied Physics 89 (2001) 7960
    Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
    E. Litwin-Staszewska, T. Suski, R. Piotrzkowski, I. Grzegory, M. Bockowski, J. L. Robert, L. Kon?czewicz, D. Wasik, E. Kamin?ska, and D. Cote
  176. Journal of Electronic Materials 30 (2001) 1382
    OMVPE growth of P-type GaN using solution Cp2Mg
    Yundong Qi, Charles Musante, Kei May Lau, Lesley Smith, Rajesh Odedra, and Ravi Kanjolia
  177. Journal of Materials Research 16 (2001) 2550
    Threading dislocations with edge components in GaN epilayers grown on Al2O3 substrates
    Junyong Kang and Tomoya Ogawa
  178. Journal of Physics Condensed Matter 13 (2001) 7139
    H Xing, S Keller, Y-F Wu, L McCarthy, I P Smorchkova, D Buttari, R Coffie, D S Green, G Parish, and S Heikman
  179. Journal of Physics Condensed Matter 13 (2001) 7089
    T Mukai, S Nagahama, N Iwasa, M Senoh, and T Yamada
  180. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 19 (2001) 215
    Effects of a two-step rapid thermal annealing process on Mg-doped p-type GaN films grown by metalorganic chemical vapor deposition
    Kwang-Soon Ahn, Dong-Joon Kim, Yong-Tae Moon, Hyo-Gun Kim, and Seong-Ju Park
  181. MRS Bulletin 26 (2001) 764
    Light-Emitting Diodes: Progress in Solid-State Lighting
    Artūras Žukauskas, Michael S. Shur, and Remis Gaska
  182. MRS Proceedings 693 (2001) I6.48.1
    Thermal Desorption of Deuterium from GaN(0001)
    Y. Yang, J. Lee, B. D. Thoms, D. D. Koleske, and R. L. Henry
  183. MRS Proceedings 693 (2001) I9.3.1
    Characterization of high-quality epitaxial AlN films grown by MOVPE
    Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai, Shigeaki Sumiya, Mitsuhiro Tanaka, Osamu Oda, Hideto Miyake, and Kazumasa Hiramatsu
  184. Materials Science and Engineering B 82 (2001) 77
    Defects in undoped and Mg-doped GaN and AlxGa1−xN
    B.K Meyer, D.M Hofmann, F.H Leiter, D Meister, M Topf, H Alves, and N Romanov
  185. Physical Review B 63 (2001) 245205
    First-principles studies of beryllium doping of GaN
    Chris Van de Walle, Sukit Limpijumnong, and Jörg Neugebauer
  186. Physical Review B 63 (2001) 125203
    Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN
    M. Bayerl, M. Brandt, O. Ambacher, M. Stutzmann, E. Glaser, R. Henry, A. Wickenden, D. Koleske, T. Suski, and I. Grzegory
  187. physica status solidi (b) 228 (2001) 357
    Activation of p-Type GaN with Irradiation of the Second Harmonics of a Q-Switched Nd : YAG Laser
    Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, Chih-Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi
  188. Applied Physics Letters 77 (2000) 1123
    Codoping characteristics of Zn with Mg in GaN
    K. S. Kim, M. S. Han, G. M. Yang, C. J. Youn, H. J. Lee, H. K. Cho, and J. Y. Lee
  189. Applied Physics Letters 77 (2000) 247
    Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition
    H. K. Cho, J. Y. Lee, K. S. Kim, and G. M. Yang
  190. Applied Physics Letters 77 (2000) 1499
    Hydrogen passivation of deep levels in n–GaN
    A. Hierro, S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, and S. P. DenBaars
  191. Applied Physics Letters 76 (2000) 3011
    Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
    F. Shahedipour and B. W. Wessels
  192. Applied Physics Letters 76 (2000) 3079
    Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment
    Sang-Woo Kim, Ji-Myon Lee, Chul Huh, Nae-Man Park, Hyun-Soo Kim, In-Hwan Lee, and Seong-Ju Park
  193. Applied Physics Letters 76 (2000) 2457
    High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage
    J. B. Limb, H. Xing, B. Moran, L. McCarthy, S. P. DenBaars, and U. K. Mishra
  194. Applied Physics Letters 76 (2000) 3703
    Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN
    Li-Chien Chen, Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Kwang-Kuo Shih, Fu-Rong Chen, Ji-Jung Kai, and Li Chang
  195. Japanese Journal of Applied Physics 39 (2000) L343
    Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
    Yoshihiro Okamoto, Kazuya Takahashi, Hiromichi Nakamura, Yoshitaka Okada and Mitsuo Kawabe
  196. Journal of Applied Physics 88 (2000) 6483
    Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg
    D. Seghier and H. P. Gislason
  197. Journal of Applied Physics 88 (2000) 188
    Kinetic, crystallographic, and optical studies of GaN and AlxGa1−xN thin films grown on Si(111) by pulsed reactive crossed-beam laser ablation using liquid alloys and N2 or NH3
    P. R. Willmott, F. Antoni, and M. Do?beli
  198. Journal of Applied Physics 88 (2000) 6515
    Properties of Mg activation in thermally treated GaN:Mg films
    C. F. Lin, H. C. Cheng, C. C. Chang, and G. C. Chi
  199. Journal of Applied Physics 88 (2000) 3470
    Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
    G. Marti?nez-Criado, A. Cros, A. Cantarero, R. Dimitrov, O. Ambacher, and M. Stutzmann
  200. Journal of Applied Physics 88 (2000) 4196
    A study of the Au/Ni ohmic contact on p-GaN
    D. Qiao, L. S. Yu, S. S. Lau, J. Y. Lin, H. X. Jiang, and T. E. Haynes
  201. Journal of Applied Physics 87 (2000) 965
    III–nitrides: Growth, characterization, and properties
    S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten
  202. Journal of Applied Physics 87 (2000) 2064
    Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition
    Dapeng Xu, Hui Yang, D. G. Zhao, S. F. Li, and R. H. Wu
  203. Journal of Crystal Growth 209 (2000) 203
    Pulsed excimer laser annealing of Mg-doped cubic GaN
    Dapeng Xu, Hui Yang, S.F Li, D.G Zhao, H Ge, and R.H Wu
  204. Journal of Electronic Materials 29 (2000) 177
    Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
    Dapeng Xu, Hui Yang, J. B. Li, S. F. Li, Y. T. Wang, D. G. Zhao, and R. H. Wu
  205. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 18 (2000) 261
    Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy
    Qin-Sheng Zhu, H. Nagai, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki
  206. MRS Proceedings 639 (2000) G3.1
    Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films
    J. Chen, Q. Zhou, Y. Berhane, M. O. Manasreh, C. A. Tran, M. Pophristic, and I. T. Ferguson
  207. Materials Science and Engineering B 75 (2000) 210
    The doping process of p-type GaN films
    C.H Kuo, J.K Sheu, C.J Pan, and G.C Chi
  208. Materials Science and Engineering B 75 (2000) 214
    Influence of precipitates on GaN epilayer quality
    Junyong Kang, Qisheng Huang, and Zhanguo Wang
  209. Materials Science and Engineering B 75 (2000) 224
    Characterization of GaN grown by RF plasma MBE
    W Li, A.Z Li, M Qi, Y.G Zhang, Z.B Zhao, and Q.K Yang
  210. Materials Science and Engineering B 71 (2000) 62
    Hydrogen and doping issues in wide band gap semiconductors
    J Chevallier
  211. Physical Review B 62 (2000) R10607
    Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
    P. Hai, W. Chen, I. Buyanova, B. Monemar, H. Amano, and I. Akasaki
  212. Physical Review B 62 (2000) 10151
    Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
    H. Teisseyre, T. Suski, P. Perlin, I. Grzegory, M. Leszczynski, M. Bockowski, S. Porowski, J. Freitas, R. Henry, and A. Wickenden
  213. Physical Review B 62 (2000) 10867
    Hole conductivity and compensation in epitaxial GaN:Mg layers
    U. Kaufmann, P. Schlotter, H. Obloh, K. Köhler, and M. Maier
  214. Physical Review B 61 (2000) 8238
    Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light
    B. Clerjaud, D. Côte, A. Lebkiri, C. Naud, J. Baranowski, K. Pakula, D. Wasik, and T. Suski
  215. Progress in Quantum Electronics 24 (2000) 239
    Group III-nitride based hetero and quantum structures
    B Monemar and G Pozina
  216. Reviews of Modern Physics 72 (2000) 315
    Pulsed laser vaporization and deposition
    J. Huber and P. Willmott
  217. physica status solidi (a) 180 (2000) 59
    The Effects of Atomic Hydrogen on Indium Incorporation and Ordering in InGaN Grown by RF-MBE
    Y. Okamoto, K. Takahashi, H. Nakamura, Y. Okada, and M. Kawabe
  218. physica status solidi (a) 180 (2000) 261
    The Red (1.8 eV) Luminescence in Epitaxially Grown GaN
    D.M. Hofmann, B.K. Meyer, H. Alves, F. Leiter, W. Burkhard, N. Romanov, Y. Kim, J. Krüger, and E.R. Weber
  219. Applied Physics Letters 75 (1999) 659
    Localized vibrational modes of carbon-hydrogen complexes in GaN
    M. O. Manasreh, J. M. Baranowski, K. Pakula, H. X. Jiang, and Jingyu Lin
  220. Applied Physics Letters 75 (1999) 808
    Inversion of wurtzite GaN(0001) by exposure to magnesium
    V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve
  221. Applied Physics Letters 75 (1999) 1383
    Local vibrational modes as a probe of activation process in p-type GaN
    H. Harima, T. Inoue, S. Nakashima, M. Ishida, and M. Taneya
  222. Applied Physics Letters 74 (1999) 3281
    Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
    A. Kaschner, H. Siegle, G. Kaczmarczyk, M. Straßburg, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, and D. Hommel
  223. Electronics Letters 35 (1999) 1671
    AlGaN/GaN HBTs using regrown emitter
    J.B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S.P. DenBaars, and U.K. Mishra
  224. Electronics and Communications in Japan (Part II Electronics) 82 (1999) 55
    Design and fabrication process consideration of GaN-based surface emitting lasers
    Tohru Honda, Tomoe Shirasawa, Nobuaki Mochida, Akira Inoue, Akihiro Matsutani, Takahiro Sakaguchi, Fumio Koyama, Hideo Kawanishi, and Kenichi Iga
  225. European Journal of Inorganic Chemistry 1999 (1999) 2127
    Synthesis and Structures of (N3)2Ga[(CH2)3NMe2], (N3)Ga[(CH2)3NMe2]2 and (N3)3Ga(NR3) (R = CH3, C2H5)
    Anjana Devi, Harald Sussek, Hans Pritzkow, Manuela Winter, and Roland A. Fischer
  226. IEEE Electron Device Letters 20 (1999) 277
    AlGaN/GaN heterojunction bipolar transistor
    L.S. McCarthy, P. Kozodoy, M.J.W. Rodwell, S.P. DenBaars, and U.K. Mishra
  227. Japanese Journal of Applied Physics 38 (1999) L1237
    GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
    Mamoru Miyachi, Hiroyuki Ota, Yoshinori Kimura, Atsushi Watanabe, Toshiyuki Tanaka, Hirokazu Takahashi and Kiyofumi Chikuma
  228. Japanese Journal of Applied Physics 38 (1999) 631
    Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
    Doo-Hyeb Youn, Mohamed Lachab,Maosheng Hao, Tomoya Sugahara, Hironori Takenaka, Yoshiki Naoi and Shiro Sakai
  229. Japanese Journal of Applied Physics 38 (1999) L230
    Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
    Yoshihiro Okamoto, Shinji  Hashiguchi,Yoshitaka  Okada and Mitsuo Kawabe
  230. Journal of Applied Physics 86 (1999) 1
    GaN: Processing, defects, and devices
    S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren
  231. Journal of Applied Physics 85 (1999) 2568
    Infrared and transmission electron microscopy studies of ion-implanted H in GaN
    C. H. Seager, S. M. Myers, G. A. Petersen, J. Han, and T. Headley
  232. Journal of Applied Physics 85 (1999) 3003
    Chemical trends for acceptor impurities in GaN
    Jo?rg Neugebauer and Chris G. Van de Walle
  233. Journal of Electronic Materials 28 (1999) 1440
    The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures
    F. Huet, M-A. Forte-Poisson, M. Calligaro, J. Olivier, F. Wyczisk, and J. Persio
  234. Journal of Electronic Materials 28 (1999) 341
    Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN
    N. Shibata, Masanori Murakami, Yasuo Koide, T. Maeda, T. Kawakami, S. Fujita, and T. Uemura
  235. Materials Science and Engineering B 59 (1999) 211
    Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes
    W Götz, R.S Kern, C.H Chen, H Liu, D.A Steigerwald, and R.M Fletcher
  236. Materials Science and Engineering B 59 (1999) 268
    Influence of strain and buffer layer type on In incorporation during GaInN MOVPE
    F Scholz, J Off, A Kniest, L Görgens, and O Ambacher
  237. Physica B Condensed Matter 273-274 (1999) 46
    Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg
    D Seghier and H.P Gislason
  238. Physica B Condensed Matter 273-274 (1999) 976
    Overcoming doping bottlenecks in semiconductors and wide-gap materials
    S.B Zhang, S.-H Wei, and A Zunger
  239. Physica B Condensed Matter 273-274 (1999) 54
    Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride
    Y Kamiura, Y Yamashita, and S Nakamura
  240. Physical Review B 60 (1999) 4816
    Electronic structure of H/GaN(0001): An EELS study of Ga-H formation
    V. Bellitto, B. Thoms, D. Koleske, A. Wickenden, and R. Henry
  241. Physical Review B 60 (1999) 15980
    Donor-hydrogen bound exciton in epitaxial GaN
    D. Chtchekine, Z. Feng, G. Gilliland, S. Chua, and D. Wolford
  242. Physical Review B 59 (1999) 5561
    Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
    U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic
  243. Physical Review B 59 (1999) 13176
    Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
    M. Reshchikov, G.-C. Yi, and B. Wessels
  244. Physical Review Letters 83 (1999) 2370
    Spontaneous Ordering in Bulk GaN:Mg Samples
    Z. Liliental-Weber, M. Benamara, J. Washburn, I. Grzegory, and S. Porowski
  245. Semiconductor Science and Technology 14 (1999) R27
    S Nakamura
  246. Surface Science 442 (1999) L1019
    Desorption of hydrogen from GaN(0001) observed by HREELS and ELS
    V.J. Bellitto, Y. Yang, B.D. Thoms, D.D. Koleske, A.E. Wickenden, and R.L. Henry
  247. Surface Science 430 (1999) 80
    HREELS of H/GaN(0001): evidence for Ga termination
    V.J. Bellitto, B.D. Thoms, D.D. Koleske, A.E. Wickenden, and R.L. Henry
  248. Surface Science 426 (1999) 199
    Surface reactions of trimethylgallium on MOVPE-grown GaN(0001)
    H.-T. Lam and J.M. Vohs
  249. physica status solidi (a) 176 (1999) 337
    Effect of Hydrogen on GaN Growth by Remote Plasma-Enhanced Metal-Organic Chemical Vapor Deposition
    Min Hong Kim, Hyun Jin Kim, Hyun Seok Na, Feng Qi, and Euijoon Yoon
  250. physica status solidi (a) 176 (1999) 23
    CW Operation of AlGaInN–GaN Laser Diodes
    T. Asano, K. Yanashima, T. Asatsuma, T. Hino, T. Yamaguchi, S. Tomiya, K. Funato, T. Kobayashi, and M. Ikeda
  251. Applied Physics Letters 73 (1998) 1877
    Thermal stability of [sup 2]H-implanted n- and p-type GaN
    S. J. Pearton, R. G. Wilson, J. M. Zavada, J. Han, and R. J. Shul
  252. Applied Physics Letters 73 (1998) 2024
    Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy
    N. Sawaki, H. Nagai, Q. S. Zhu, Y. Kawaguchi, and K. Hiramatsu
  253. Applied Physics Letters 73 (1998) 1394
    Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2
    P. R. Willmott and F. Antoni
  254. Applied Physics Letters 73 (1998) 1772
    Improved Mg-doped GaN films grown over a multilayered buffer
    Xiong Zhang, Soo-Jin Chua, Peng Li, Kok-Boon Chong, and Wen Wang
  255. Applied Physics Letters 73 (1998) 1883
    Effect of surface layer on optical properties of GaN and InxGa1−xN upon thermal annealing
    Eunsoon Oh, Bongjin Kim, Hyeongsoo Park, and Yongjo Park
  256. Applied Physics Letters 72 (1998) 1326
    Nature of the 2.8 eV photoluminescence band in Mg doped GaN
    U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter
  257. Applied Physics Letters 72 (1998) 1365
    Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
    D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan
  258. Applied Physics Letters 72 (1998) 1703
    Hydrogen-decorated lattice defects in proton implanted GaN
    Marcie G. Weinstein, C. Y. Song, Michael Stavola, S. J. Pearton, R. G. Wilson, R. J. Shul, K. P. Killeen, and M. J. Ludowise
  259. Applied Physics Letters 72 (1998) 1748
    p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition
    Lisa Sugiura, Mariko Suzuki, and Johji Nishio
  260. Applied Physics Letters 72 (1998) 2841
    Electrical characteristics of magnesium-doped gallium nitride junction diodes
    J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat
  261. Applied Physics Letters 72 (1998) 1101
    The activation of Mg in GaN by annealing with minority-carrier injection
    Mamoru Miyachi, Toshiyuki Tanaka, Yoshinori Kimura, and Hiroyuki Ota
  262. Current Opinion in Solid State and Materials Science 3 (1998) 45
    Gallium nitride based materials and their application for light emitting devices
    Stacia Keller and Denbaars Steven P
  263. Japanese Journal of Applied Physics 37 (1998) L1109
    Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
    Yoshihiro Okamoto, Shinji  Hashiguchi,Yoshitaka  Okada and Mitsuo Kawabe
  264. Japanese Journal of Applied Physics 37 (1998) 3878
    Characteristics of Mg-Doped GaN and AlGaN Grown by H2-Ambient and N2-Ambient Metalorganic Chemical Vapor Deposition
    Lisa Sugiura, Mariko Suzuki, Johji Nishio, Kazuhiko Itaya, Yoshihiro Kokubun and Masayuki Ishikawa
  265. Japanese Journal of Applied Physics 37 (1998) L970
    Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
    Yoichi Kamiura, Yoshifumi Yamashita and Shuji Nakamura
  266. Journal of Applied Physics 84 (1998) 1155
    Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
    T. Suski, J. Jun, M. Leszczyn?ski, H. Teisseyre, S. Strite, A. Rockett, A. Pelzmann, M. Kamp, and K. J. Ebeling
  267. Journal of Applied Physics 84 (1998) 4590
    Photoluminescence spectroscopy of Mg-doped GaN
    J. K. Sheu, Y. K. Su, G. C. Chi, B. J. Pong, C. Y. Chen, C. N. Huang, and W. C. Chen
  268. Journal of Applied Physics 83 (1998) 5992
    Structural defects and microstrain in GaN induced by Mg ion implantation
    B. J. Pong, C. J. Pan, Y. C. Teng, G. C. Chi, W.-H. Li, K. C. Lee, and Chih-Hao Lee
  269. Journal of Electronic Materials 27 (1998) 238
    Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates
    A. D. Hanser, C. A. Wolden, W. G. Perry, T. Zheleva, E. P. Carlson, A. D. Banks, R. J. Therrien, and R. F. Davis
  270. Journal of Electronic Materials 27 (1998) 222
    Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy
    G. P. Yablonskii, A. L. Gurskii, E. V. Lutsenko, I. P. Marko, B. Schineller, A. Guttzeit, O. Schön, M. Heuken, K. Heime, and R. Beccard
  271. Journal of Electronic Materials 27 (1998) L35
    Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy
    R. Zhang and T. F. Kuech
  272. Journal of Physics D Applied Physics 31 (1998) 2653
    Growth and applications of Group III-nitrides
    O Ambacher
  273. MRS Proceedings 537 (1998) G10.4
    Doping of Aigan Alloys
    Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson
  274. MRS Proceedings 537 (1998) G11.8
    Defect Luminescence in Heavily Mg Doped GaN
    M. A. Reshchikov, G.-C. Yi, and B. W. Wessels
  275. MRS Proceedings 537 (1998) G5.9
    Spectroscopy of Proton Implanted GaN
    M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinska, G.D. Watkins, S.J. Pearton, and R.G Wilson
  276. MRS Proceedings 537 (1998) G6.31
    Electrical Characterization of MOVPE-GROWN P-Type GaN:Mg Against Annealing Temperature
    Shizuo Fujita, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, and Shigeo Fujita
  277. MRS Proceedings 537 (1998) G6.42
    Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer Movpe Reactor
    R.W. Chuang, A.Q. Zou, H.P. Lee, Z.J. Dong, F.F. Xiong, R. Shih, M. Bremser, and H. Juergensen
  278. MRS Proceedings 510 (1998) 145
    Recent Progress in Crystal Growth and Conductivity Control of Wide Bandgap Group III Nitride Semiconductors
    I. Akasaki
  279. Physical Review B 58 (1998) 3879
    Acceptor binding energies in GaN and AlN
    Francisco Mireles and Sergio Ulloa
  280. Physical Review B 58 (1998) 7786
    Thermopower investigation of n- and p-type GaN
    M. Brandt, P. Herbst, H. Angerer, O. Ambacher, and M. Stutzmann
  281. Physics of the Solid State 40 (1998) 1648
    Electron paramagnetic resonance of defects with metastable properties in crystalline GaN
    P. G. Baranov, I. V. Il’in, E. N. Mokhov, and V. A. Khramtsov
  282. Progress in Crystal Growth and Characterization of Materials 36 (1998) 291
    Doping limits in II–VI compounds — Challenges, problems and solutions
    U.V. Desnica
  283. Reports on Progress in Physics 61 (1998) 1
    J W Orton and C T Foxon
  284. Applied Physics Letters 70 (1997) 1417
    Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
    Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, and Hiroyuki Kiyoku
  285. Applied Physics Letters 70 (1997) 357
    Carbon–hydrogen complexes in vapor phase epitaxial GaN
    Gyu-Chul Yi and Bruce W. Wessels
  286. Electronics Letters 33 (1997) 1987
    Growth of low resistivity p-type GaN by metal organic chemical vapour deposition
    C.J. Eiting, P.A. Grudowski, and R.D. Dupuis
  287. IEEE Journal of Selected Topics in Quantum Electronics 3 (1997) 712
    InGaN-based blue laser diodes
    S. Nakamura
  288. IEEE Journal of Selected Topics in Quantum Electronics 3 (1997) 435
    GaN-based blue/green semiconductor laser
    S. Nakamura
  289. JOM 49 (1997) 18
    III–V Nitride semiconductors for high-performance blue and green light-emitting devices
    Daniel Steigerwald, Serge Rudaz, Heng Liu, R. Scott Kern, Werner Götz, and Robert Fletcher
  290. Japanese Journal of Applied Physics 36 (1997) L180
    Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method
    Tetsuya Yamamoto and Hiroshi Katayama-Yoshida
  291. Japanese Journal of Applied Physics 36 (1997) 1733
    In-Situ STM Observation of GaAs Surfaces after Nitridation
    Toshiki Makimoto, Makoto Kasu, Jean L. Benchimol and Naoki Kobayashi
  292. Japanese Journal of Applied Physics 36 (1997) 5393
    Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
    Isamu Akasaki and Hiroshi Amano
  293. Journal of Applied Physics 82 (1997) 219
    On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy
    Wook Kim, A. E. Botchkarev, A. Salvador, G. Popovici, H. Tang, and H. Morkoc?
  294. Journal of Applied Physics 81 (1997) 2197
    Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
    D. G. Chtchekine, L. P. Fu, G. D. Gilliland, Y. Chen, S. E. Ralph, K. K. Bajaj, Y. Bu, M. C. Lin, F. T. Bacalzo, and S. R. Stock
  295. Journal of Electronic Materials 26 (1997) 198
    Hydrogen passivation in n- and p-type 6H-SiC
    F. Ren, J. M. Grow, M. Bhaskaran, R. G. Wilson, and S. J. Pearton
  296. Journal of the European Ceramic Society 17 (1997) 1775
    Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6H?SiC(0001) substrates
    Robert F. Davis, M.D. Bremser, W.G. Perry, and K.S. Ailey
  297. MRS Proceedings 495 (1997) 147
    New Magnesium Precursors for Doping Semiconductor Films
    Charles H. Winter, Jennifer L. Sebestl, and Mary Jane Heeg
  298. Materials Letters 30 (1997) 131
    Wide bandgap light-emitting devices materials and doping problems
    G.F. Neumark
  299. Materials Science and Engineering B 43 (1997) 258
    First laser diodes fabricated from III–V nitride based materials
    Shuji Nakamura
  300. Philosophical Magazine Part B 76 (1997) 131
    Proposed explanation of the anomalous doping characteristics of III–V nitrides
    S. Noor Mohammad, Andrei E. Botchkarev, Arnel Salvador, Wook Kim, Ozgur Aktas, and Hadis Morkoç
  301. Physica Scripta t69 (1997) 40
    Passivation of impurities in semiconductors by hydrogen and light metal ions
    Hafliði P Gislason
  302. Physical Review B 56 (1997) R10020
    Interactions of hydrogen with native defects in GaN
    Chris Van de Walle
  303. Physical Review B 55 (1997) 4360
    Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
    Yu. M. Sirenko, J. B. Jeon, B. C. Lee, K. W. Kim, M. A. Littlejohn, M. A. Stroscio, and G. J. Iafrate
  304. Physical Review B 55 (1997) 12995
    Stability of deep donor and acceptor centers in GaN, AlN, and BN
    C. H. Park and D. J. Chadi
  305. Proceedings of the IEEE 85 (1997) 1740
    Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices
    S.P. Denbaars
  306. Progress in Crystal Growth and Characterization of Materials 35 (1997) 243
    Metalorganic vapour phase epitaxy of GaN and GaInN/GaN heterostructures and quantum wells
    F. Scholz
  307. Quantum Electronics 27 (1997) 1035
    Semiconductor lasers
    P G Eliseev and Yurii M Popov
  308. Semiconductor Science and Technology 12 (1997) 280
    B C Lee, N S Mansour, Yu M Sirenko, K W Kim, and M A Littlejohn
  309. Solid State Communications 102 (1997) 237
    III–V nitride based light-emitting devices
    Shuji Nakamura
  310. Solid-State Electronics 41 (1997) 1943
    Stability of hydrogen in ScAlMgO4
    C.D. Brandle, F. Ren, R.G. Wilson, J.W. Lee, S.J. Pearton, and J.M. Zavada
  311. The Journal of Chemical Physics 107 (1997) 9577
    Surface composition and structure of GaN epilayers on sapphire
    J. Ahn, M. M. Sung, J. W. Rabalais, D. D. Koleske, and A. E. Wickenden
  312. physica status solidi (a) 159 (1997) 121
    On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs
    B. Clerjaud, D. Côte, W.-S. Hahn, A. Lebkiri, W. Ulrici, and D. Wasik
  313. physica status solidi (a) 159 (1997) 105
    Hydrogen in Gallium Nitride Grown by MOCVD
    O. Ambacher, H. Angerer, R. Dimitrov, W. Rieger, M. Stutzmann, G. Dollinger, and A. Bergmaier
  314. Advanced Materials 8 (1996) 689
    InGaN-based blue/green LEDs and laser diodes
    Shuji Nakamura
  315. Advanced Materials 8 (1996) 469
    InGaAlN and II-VI Systems for Blue-Green Light-Emitting Devices
    Takashi Matsuoka
  316. Diamond and Related Materials 5 (1996) 496
    III-V nitride-based light-emitting diodes
    S NAKAMURA
  317. Japanese Journal of Applied Physics 35 (1996) L74
    InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
    Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto
  318. Japanese Journal of Applied Physics 35 (1996) L217
    InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
    Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto
  319. Japanese Journal of Applied Physics 35 (1996) L807
    First-Principles Calculations on Mg Impurity and Mg–H Complex in GaN
    Yasuharu Okamoto, Mineo Saito and Atsushi Oshiyama
  320. Journal of Applied Physics 80 (1996) 2687
    Effect of e-beam irradiation on a p-n junction GaN light emitting diode
    X. Li, S. Q. Gu, E. E. Reuter, J. T. Verdeyen, S. G. Bishop, and J. J. Coleman
  321. Journal of Applied Physics 80 (1996) 4609
    Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition
    D. A. Turnbull, X. Li, S. Q. Gu, E. E. Reuter, J. J. Coleman, and S. G. Bishop
  322. Journal of Applied Physics 79 (1996) 7433
    Semiconductor ultraviolet detectors
    M. Razeghi and A. Rogalski
  323. Journal of Applied Physics 79 (1996) 2779
    Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
    R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, and K. Meehan
  324. Journal of Applied Physics 79 (1996) 3487
    Nitridation process of sapphire substrate surface and its effect on the growth of GaN
    K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, and S. Minagawa
  325. MRS Proceedings 449 (1996) 173
    Growth of Cubic GaN by MBE and Its Properties
    S. Yoshida, H. Okumura, G. Feuillet, P. Hacke, and K. Balakrishnan
  326. MRS Proceedings 449 (1996) 385
    MBE Growth and Characterization of Zns/Gan Heterostructures
    E. C. Piquette, Z. Z. Bandić, J. O. McCaldin, and T. C. McGill
  327. MRS Proceedings 449 (1996) 861
    Theory of Point Defects and Interfaces
    Chris G Van de Walle and Jörg Neugebauer
  328. MRS Proceedings 449 (1996) 961
    First Microscopic Observation of Cadmium-Hydrogen Pairs in GaN
    A. Burchard, M. Deicher, D. Forkel-Wirth, E. E. Haller, R. Magerle, A. Prospero, and R. Stötzler
  329. MRS Proceedings 449 (1996) 1011
    Pulsed Excimer Laser Processing of AlN/GaN Thin Films
    W. S. Wong, L. F. Schloss, G.S. Sudhir, B. P. Linder, K-M. Yu, E. R. Weber, T. Sands, and N. W. Cheung
  330. MRS Proceedings 449 (1996) 1151
    Design Consideration of GaN-Based Surface Emitting Lasers
    T. Honda, F. Koyama, and K. Iga
  331. Physical Review B 54 (1996) 14652
    Composition and structure of the GaN{0001¯}-(1×1) surface
    D. Koleske, A. Wickenden, M. Sung, J. Ahn, V. Bykov, and J. Rabalais
  332. Semiconductor Science and Technology 11 (1996) 366
    A V Andrianov, D E Lacklison, J W Orton, D J Dewsnip, S E Hooper, and C T Foxon
  333. Thin Solid Films 287 (1996) 184
    Changes in surface composition of GaN by impurity doping
    T. Mori, T. Ohwaki, Y. Taga, N. Shibata, M. Koike, and K. Manabe
  334. physica status solidi (a) 158 (1996) 587
    Yellow Luminescence and Hydrocarbon Contamination in MOVPE-Grown GaN
    P. De Mierry, O. Ambacher, H. Kratzer, and M. Stutzmann
  335. IEEE Circuits and Devices Magazine 11 (1995) 19
    A bright future for blue/green LEDs
    S. Nakamura
  336. Japanese Journal of Applied Physics 34 (1995) L1332
    Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
    Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama, Takao Yamada, Takashi Mukai1
  337. Japanese Journal of Applied Physics 34 (1995) L1429
    GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
    Hiromitsu Sakai, Takashi Koide, Hiroyuki Suzuki, Machiko Yamaguchi, Shiro Yamasaki1, Masayoshi Koike1, Hiroshi Amano, Isamu Akasaki
  338. Japanese Journal of Applied Physics 34 (1995) L1517
    Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
    Isamu Akasaki, Hiroshi Amano, Shigetoshi Sota, Hiromitsu Sakai, Toshiyuki Tanaka1 and Masayoshi Koike2
  339. Japanese Journal of Applied Physics 34 (1995) L797
    High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
    Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama
  340. Journal of Applied Physics 78 (1995) 1838
    Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates
    D. E. Lacklison, J. W. Orton, I. Harrison, T. S. Cheng, L. C. Jenkins, C. T. Foxon, and S. E. Hooper
  341. Journal of Electronic Materials 24 (1995) 137
    Thermal annealing effects on p-type conductivity of nitrogendoped ZnSe grown by metalorganic vapor phase epitaxy
    Shizuo Fujita, Tsuyoshi Tojyo, Tetsu Yoshizawa, and Shigeo Fujita
  342. Journal of Electronic Materials 24 (1995) 249
    The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy
    T. C. Fu, N. Newman, E. Jones, J. S. Chan, X. Liu, M. D. Rubin, N. W. Cheung, and E. R. Weber
  343. MRS Proceedings 395 (1995) 15
    Growth and Properties of Bulk Single Crystals of GaN
    S. Porowski, K. Pakuła, A. Wysmołek, T. Suski, P. Perlin, M. Leszczyński, H. Teisseyre, I. Grzegory, J. Jun, and M. Boćkowski
  344. MRS Proceedings 395 (1995) 157
    Plasma-Assisted MBE of GaN and AlGaN on 6H SiC(0001)
    S. Sinharoy, A. K. Agarwal, G. Augustine, L. B. Rowland, R. L. Messham, M. C. Driver, and R. H. Hopkins
  345. MRS Proceedings 395 (1995) 443
    Shallow and Deep Level Defects in GaN
    W. Götz, N.M. Johnson, D.P. Bour, C. Chen, H. Liu, C. Kuo, and W. Imler
  346. MRS Proceedings 395 (1995) 685
    Role of C, O and H in III-V Nitrides
    C. R. Abernathy, S. J. Pearton, J. D. MacKenzie, J. W. Lee, C. B. Vartuli, R. G. Wilson, R. J. Shul, J. C. Zolper, and J. M. Zavada
  347. MRS Proceedings 395 (1995) 855
    Ohmic contacts to Si-implanted and un-implanted n-type GaN
    J. Brown, J Ramer, K. ZHeng, L.F. Lester, S.D. Hersee, and J Zolper
  348. MRS Proceedings 395 (1995) 869
    Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001)Si
    Hiroshi Amano, Shigetoshi Sota, Masaki Nishikawa, Masato Yoshida, Makoto Kawaguchi, Masahiro Ohta, Hiromitsu Sakai, and Isamu Akasaki
  349. MRS Proceedings 395 (1995) 497
    Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition
    Hongqiang Lu and Ishwara Bhat
  350. MRS Proceedings 395 (1995) 763
    Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen
    L. Zhang, J. Ramer, J. Brown, K. Zheng, L.F. Lester, and S.D. Hersee
  351. MRS Proceedings 395 (1995) 889
    Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors
    M. Koike, N. Shibata, S. Yamasaki, S. Nagai, S. Asami, H. Kato, N. Koide, H. Amano, and I. Akasaki
  352. Physical Review Letters 75 (1995) 4452
    Hydrogen in GaN: Novel Aspects of a Common Impurity
    Jörg Neugebauer and Chris Van de Walle
  353. Semiconductor Science and Technology 10 (1995) 101
    J W Orton
  354. Applied Physics Letters 65 (1994) 593
    p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
    T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike
  355. Applied Physics Letters 64 (1994) 2724
    Hydrogenation of GaN, AlN, and InN
    J. M. Zavada, R. G. Wilson, C. R. Abernathy, and S. J. Pearton
  356. Applied Physics Letters 64 (1994) 1687
    Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
    Shuji Nakamura, Takashi Mukai, and Masayuki Senoh
  357. Applied Physics Letters 64 (1994) 2264
    Hydrogenation of p-type gallium nitride
    M. S. Brandt, N. M. Johnson, R. J. Molnar, R. Singh, and T. D. Moustakas
  358. Electronics Letters 30 (1994) 527
    Electrical passivation in hydrogen plasma exposed GaN
    S.J. Pearton, C.R. Abernathy, and F. Ren
  359. Journal of Applied Physics 76 (1994) 236
    Thermal stability of GaN thin films grown on (0001) Al2O3, (011?2) Al2O3 and (0001)Si 6H-SiC substrates
    C. J. Sun, P. Kung, A. Saxler, H. Ohsato, E. Bigan, M. Razeghi, and D. K. Gaskill
  360. Journal of Applied Physics 76 (1994) 8189
    High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
    Shuji Nakamura, Takashi Mukai, and Masayuki Senoh
  361. Journal of Applied Physics 76 (1994) 1363
    Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
    H. Morkoc?, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns
  362. Physical Review B 49 (1994) 14758
    Local vibrational modes in Mg-doped gallium nitride
    M. Brandt, J. Ager, W. Götz, N. Johnson, J. Harris, R. Molnar, and T. Moustakas
  363. Applied Physics Letters 63 (1993) 3625
    Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
    M. E. Lin, B. N. Sverdlov, and H. Morkoc?
  364. Applied Physics Letters 62 (1993) 2390
    High-power InGaN/GaN double-heterostructure violet light emitting diodes
    Shuji Nakamura, Masayuki Senoh, and Takashi Mukai
  365. Applied Physics Letters 62 (1993) 381
    Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
    Barbara Goldenberg, J. David Zook, and Robert J. Ulmer
  366. Japanese Journal of Applied Physics 32 (1993) L8
    P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
    Shuji Nakamura, Masayuki Senoh and Takashi Mukai
  367. physica status solidi (b) 174 (1992) K57
    Infrared lattice vibrations of GaN
    H. Sobotta, H. Neumann, R. Franzheld, and W. Seifert

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